Method of manufacturing a semiconductor device and manufacturing system thereof

ABSTRACT

A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.

This is a divisional of U.S. application Ser. No. 08/616,623, filed Mar.15, 1996 now U.S. Pat. No. 5,956,581.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing a thin-filmsemiconductor device which is formed on a substrate having an insulatingsurface of a glass substrate or the like. Also, the present inventionrelates to a method of manufacturing a semiconductor device (forexample, a thin-film transistor) using a thin-film semiconductor device.

2. Description of the Related Art

In recent years, attention has been paid to a thin-film transistor as asemiconductor device using a thin-film semiconductor device. Inparticular, attention has been paid to a structure in which a thin-filmtransistor is mounted on a liquid-crystal electro-optic device. This isto constitute the thin-film transistor using a thin-film semiconductordevice which is formed on a glass substrate constituting theliquid-crystal electro-optic unit. In this case, the thin-filmtransistor is disposed on each pixel electrode of the liquid-crystalelectro-optic device and functions as a switching element that controlscharges going in and out of the pixel electrode. Such a structure iscalled an active matrix liquid-crystal display unit and is capable ofdisplaying an image with very high quality.

The active matrix liquid-crystal display unit, in general, has astructure in which an IC circuit constituting a peripheral drive circuitfor driving a pixel thin-film transistor is disposed on a glasssubstrate through the COG technique, or the like. In other words, thereis adopted a structure in which a large number of IC chips are disposedon the peripheral portion of a pixel region where a large number ofpixels are arranged in the form of a matrix.

However, this structure is complicated in wiring from the IC chip andlower in productivity and reliability. Also, the existence of anexternal circuit such as the IC circuit makes a liquid-crystal panelthick. This problem leads to the lowering of the degree of the generalpurpose of the liquid-crystal panel.

As a structure that solves such a problem, there has been proposed astructure in which a drive circuit for driving the thin-film transistordisposed in the pixel region is also integrated with the liquid-crystaldisplay unit (for example, refer to Japanese Patent Examined PublicationNo. Hei 261032).

This has a structure in which a pixel region and a peripheral drivecircuit for driving a thin-film transistor in the pixel region areintegrated with each other on one translucent substrate (glass substrateis generally used) This structure can be made simple and high in thedegree of the general purpose.

The peripheral drive circuit is comprised of a shift register, an analogbuffer circuit and other circuits that deal with an image signal. It isneedless to say that those circuits are demanded to operate at theoperation frequency of the image signal.

In order to solve the above difficulty, there has been adopted such astructure that a method of dealing with the image signal is devised, orcircuits are arranged in parallel. However, those devices lead to such asituation that the operation method or the circuit structure iscomplicated, to thereby lower the practicability.

In order to solve this problem, the characteristic of an amorphoussilicon film is enhanced. To achieve this, it is useful that theamorphous silicon film is crystallized into a crystalline silicon film.For a method of obtaining the crystalline silicon film, there has beenknown a method of subjecting an amorphous silicon film which has beenformed through the plasma CVD technique or the decompression thermal CVDtechnique to a heat treatment.

However, in case of using a thin-film transistor in the active matrixliquid-crystal electro-optic device, there arises such a problem that aglass substrate need be utilized as a substrate from the viewpoint ofeconomics. In order to crystalize the amorphous silicon by heating, aheat treatment must be conducted at a temperature of 600° C. or higherfor several tens hours or longer.

However, even though a thin-film transistor is constituted using thecrystalline silicon film obtained in the above manner, the transistorcannot operate at a frequency except for several MHz or lower. In otherwords, the image signal generally has a frequency band of several MHz toseveral tens MHz or higher, and the general thin-film transistor doesnot normally operate at a frequency except for about several MHz orlower even though the crystalline silicon film is used therefor.

The glass substrate is warped or deformed by heating at 600° C. orhigher for several tens hours or longer. This becomes remarkable inparticular when the glass substrate is increased in area. Since theliquid-crystal electro-optic device is required to has a structure inwhich liquid crystal is interposed and held between a pair of glasssubstrates which are laminated at an interval of several μm, thedeformation of the glass substrate causes the nonuniformity of displayand therefore is not preferable.

In order to eliminate the above problem, a quartz substrate or aspecified glass substrate that withstands a heat treatment at a hightemperature may be used as a substrate. However, the quartz substrate orthe specified glass substrate that withstands a high temperature isexpensive and therefore difficult to use from the viewpoint of theproduction costs.

Also, there has been known a technique in which an amorphous siliconfilm is crystallized by the irradiation of a laser beam. In case ofutilizing the irradiation of a laser beam, a crystalline silicon filmwhich is partially very excellent in crystalline property can beobtained, whereas there arise such problems that it is hard to obtainthe uniformity of the effect of irradiation of a laser beam over theentire film, and also that even the crystalline silicon films asobtained are increased in dispersion every process (in other words, lowin reproducibility).

SUMMARY OF THE INVENTION

The present invention has been made in view of the above, and thereforean object of the invention is to obtain a crystalline silicon film on aglass substrate or a substrate having an insulating surface at arelatively low temperature (this temperature means, for example, atemperature which is withstood by the glass substrate).

Another object of the present invention is to obtain a crystallinesilicon film which is capable of constituting a thin-film transistor ofa peripheral drive circuit in an active matrix liquid-crystal displayunit at a process temperature of a relatively low temperature.

In order to solve the above problem, according to one aspect of thepresent invention, there is provided a method of manufacturing asemiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen or helium; and    -   giving an energy to said amorphous silicon film.

Also, according to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen or helium to form an unpaired binding        bond of silicon; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

Also, according to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen to degasify hydrogen in said amorphous        silicon film by hydrogen in plasma; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

Also, according to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains helium and cutting off the binding of silicon        and hydrogen in said amorphous silicon film by helium atoms        which are ionized in said plasma to promote the elimination of        hydrogen from said amorphous silicon film; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, which comprises thesteps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   holding a metal element that promotes the crystallization of        silicon in contact with the surface of said amorphous silicon        film;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen or helium; and    -   giving an energy to said amorphous silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   holding a metal element that promotes the crystallization of        silicon in contact with the surface of said amorphous silicon        film;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen or helium to form an unpaired binding        bond of silicon; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   holding a metal element that promotes the crystallization of        silicon in contact with the surface of said amorphous silicon        film;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains hydrogen to degasify hydrogen in said amorphous        silicon film by hydrogen in plasma; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming an amorphous silicon film on a substrate having an        insulating surface;    -   holding a metal element that promotes the crystallization of        silicon in contact with the surface of said amorphous silicon        film;    -   processing said amorphous silicon film by plasma of a gas that        mainly contains helium and cutting off the binding of silicon        and hydrogen in said amorphous silicon film by helium atoms        which are ionized in said plasma to promote the elimination of        hydrogen from said amorphous silicon film; and    -   giving an energy to said amorphous silicon film to crystallize        said amorphous silicon film.

In the present invention, a glass substrate or a quartz substrate can beused as a substrate having an insulating surface. In general, the glasssubstrate is used from the viewpoint of economics.

One of methods of generating plasma of hydrogen or helium is a methodusing the ECR (electron cyclotron resonance) condition. Also, a parallelplane type plasma generating device which is frequently used in generalcan be also used. Further, other methods may be used for generatingplasma. What is important is to utilize means for generating plasma adensity of which is as high as possible.

The reason why plasma of hydrogen or helium is used is as follows. Thereason why plasma is used is to eliminate hydrogen in the silicon film.In case of using hydrogen plasma, the active seed of hydrogen ions orhydrogen atoms in plasma is coupled with hydrogen in the silicon filminto a hydrogen molecule, with the result that dehydrogenationprogresses. Also, in case of using helium plasma, the binding of siliconand hydrogen is cut off by an ionization energy which is high in heliumplasma, to thereby promote the elimination of hydrogen from the siliconfilm. For achieving such an object, it is preferable that the density ofplasma is as high as possible. Also, in order to promote the eliminationof hydrogen, it is useful to conduct a heat treatment during the plasmaprocessing.

As a silicon film which is subjected to the plasma processing, the useof amorphous silicon can obtain the highest effect. This is becausehydrogen of 20 to 30 atms % is contained in the amorphous silicon film.

In general, in case of using a glass substrate, an energy given to theamorphous silicon film is given by heating at a temperature of from 350°C. or higher, preferably 400° C. to a strain point of said glasssubstrate. Also, the upper limit of the heating temperature is of atemperature which can be withstood by a glass substrate (thistemperature is generally given by the strain point of the glasssubstrate) or less, and may be of a temperature at which silicon iscrystallized. The temperature at which silicon is crystallized is about550 to 600° C. although being different depending on the density ofimpurities or the film forming method.

Also, in case of using the glass substrate as a substrate, an energygiven to the amorphous silicon film is given by heating at a temperatureof from about 350° C., preferably 400° C. to a strain point of saidglass substrate.

Also, it is effective to give an energy to the amorphous silicon film bythe irradiation of a laser beam or an intense light beam in addition tothe above heating method.

Moreover, in case of using the glass substrate as a substrate, an energymay be given to the amorphous silicon film by alternately conductingheating at a temperature of the strain point of the glass substrate orlower, and the irradiation of a laser beam by one or a plurality oftimes.

Furthermore, in a method of manufacturing a semiconductor device inaccordance with the present invention, the amorphous silicon filmis-patterned to first form a region which will come to a seed later andto further form the seed of crystal growth by conducting crystallizationdue to the plasma processing and the application of an energy.

Therefore, according to the present invention, there is provided amethod of manufacturing a semiconductor device, which comprises thesteps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   exposing said first silicon film to plasma of hydrogen or plasma        of helium;    -   crystallizing said first silicon film by giving an energy to        said first silicon film;    -   patterning said first silicon film which has been crystallized        to form a seed of crystal growth;    -   forming a second silicon film by covering said seed of crystal        growth;    -   exposing said second silicon film to plasma of hydrogen or        plasma of helium; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

According to still another aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprisingthe steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   holding a metal element that promotes the crystallization of        silicon in contact with said first silicon film before or after        said forming step;    -   exposing said first silicon film to plasma of hydrogen or plasma        of helium;    -   giving an energy to said first silicon film to crystallize said        first silicon film;    -   patterning said first silicon film which has been crystallized        to form a seed of crystal growth;    -   forming a second silicon film by covering said seed of crystal        growth;    -   exposing said second silicon film to plasma of hydrogen or        plasma of helium; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

One of methods of generating plasma of hydrogen or helium is a methodusing the ECR condition. Also, a parallel plane type plasma generatingdevice which is frequently used in general can be also used. Further,other methods may be used for generating plasma. What is important is toutilize means for generating plasma a density of which is as high aspossible. With such means, the elimination of hydrogen in the amorphoussilicon film is promoted.

In particular, in order to promote the elimination of hydrogen, it isuseful to conduct a heat treatment during the plasma processing. Theheat treatment is preferably conducted at a temperature of from 400° C.to a strain point of the glass substrate. Also, it may be a temperatureof from 400° C. to the crystallization temperature of the amorphoussilicon film (in general, 600° C. or lower).

As a silicon film which is subjected to the plasma processing, the useof amorphous silicon can obtain the highest effect. This is becausehydrogen of 20 to 30 atms % is contained in the amorphous silicon film.

As a method of giving an energy to the silicon film in theabove-mentioned structure, there are a heating method and a method ofirradiating a laser beam while heating. In particular, the method ofirradiating a laser beam while heating is very effective. This isbecause an instantaneous crystal growth due to the irradiation of alaser beam progresses. Also, although the irradiation of a laser beammay be replaced by the irradiation of an intense light beam, it cannotobtain the effect comparable to that of the irradiation of a laser beam.Furthermore, a heating may be further conducted after the irradiation ofa laser beam while heating. The irradiation of a laser beam and aheating may be alternately conducted while heating. The heating afterthe irradiation of a laser beam has such an effect that point defects inthe film are reduced.

A heating temperature at the time of giving an energy to the siliconfilm need be set to a strain point of the glass substrate, or less. Thisis because to restrain the deformation of the glass substrate.

For a metal element that promotes the crystallization of silicon, onekind of element or plural kinds of elements which are selected from Fe,Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag and Au can be used. Inparticular, it is useful to utilize an Ni element.

One method of holding the above metal element in contact with a siliconfilm is of a method of holding a film containing the above metal incontact with a silicon film. Also, one method of readily controlling thedensity of the above metal element is of a method coating a solutioncontaining the above metal element therein on a silicon film. Accordingto this method, the density of the metal element in the solution isadjusted to thereby readily control the density of the above metalelements that finally remain in the silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   eliminating hydrogen from said first silicon film;    -   giving an energy to said first silicon film to crystalize said        first silicon film;    -   patterning said first silicon film which has been crystallized        to form a seed of crystal growth;    -   covering said seed of crystal growth to form a second silicon        film;    -   eliminating hydrogen in said second silicon film; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   eliminating hydrogen from said first silicon film;    -   holding a metal element that promotes the crystallization of        silicon in contact with said first silicon film before or after        said forming step;    -   giving an energy to said first silicon film to crystalize said        first silicon film;    -   patterning said first silicon film which has been crystallized        to form a seed of crystal growth;    -   covering said seed of crystal growth to form a second silicon        film;    -   eliminating hydrogen in said second silicon film; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   patterning said first silicon film which has been crystallized        to form a seed of crystal growth;    -   dehydrogenating hydrogen in said seed;    -   giving an energy to said seed to crystallize said seed;    -   coating said seed to form a second silicon film;    -   dehydrogenating hydrogen in said second silicon film; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   dehydrogenating hydrogen in said first silicon film;    -   patterning said first silicon film to form a seed of crystal        growth;    -   giving an energy to said seed to crystallize said seed;    -   coating said seed to form a second silicon film;    -   dehydrogenating hydrogen in said second silicon film; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   forming a first silicon film on a substrate having an insulating        surface;    -   dehydrogenating hydrogen in said first silicon film;    -   patterning said first silicon film to form a seed of crystal        growth;    -   holding a metal element that promotes the crystallization of        silicon in contact with said first silicon film before or after        said forming step;    -   giving an energy to said seed to crystallize said seed;    -   coating said seed to form a second silicon film;    -   dehydrogenating hydrogen in said second silicon film; and    -   giving an energy to said second silicon film to crystallize said        second silicon film.

In the present invention, the crystal growth from the seed of thecrystal growth allows a monocrystal-like region or a substantiallymonocrystal-like region to be formed. In particular, the crystal growthfrom the seed of the crystal growth based on the first silicon filmallows a monocrystal-like region or a substantially monocrystal-likeregion to be formed in the second silicon film.

The monocrystal-like region or the substantially monocrystal-like regionis defined as a region that satisfies such conditions that it hassubstantially no grain boundary; it contains hydrogen or halogenelements therein; it contains carbon atoms and nitrogen atoms at adensity of 1×10¹⁶ to 5×10¹⁸ atms cm⁻³ therein; and it contains oxygenatoms at a density of 1×10¹⁷ to 5×10¹⁹ atms cm⁻³ therein.

It should be noted that the density of those elements is defined as aminimum value which is measured by the SIMS (secondary ion measuringsystem).

The above-mentioned conditions result from an amorphous silicon filmwhich has been formed through the vapor phase technique or the like as astarting film. Also, the inclusion of hydrogen or halogen elementsresults from the amorphous silicon film which has been formed throughthe vapor phase technique or the like as a starting film, likewise. Inother words, the monocrystal-like region or the substantiallymonocrystal like region contains hydrogen or halogen elements forcompensating the point defects which are caused to be formed in thefilm. For example, in case of containing hydrogen, its density becomes0.0001 to 5 atms %.

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, which comprises thesteps of:

-   -   providing a plurality of groups having a semiconductor region on        the same substrate having an insulating surface;    -   forming one or a plurality of said semiconductor regions in said        group; and    -   forming said semiconductor region mainly by the monocrystal-like        or the substantially monocrystal region;    -   wherein, between one of said plurality of groups and other        groups, main crystal axes in said monocrystal-like or        substantially monocrystal-like region are substantial identical        to each other, and rotating angles with said crystal axes as a        center are different from each other.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   providing a plurality of groups having a semiconductor region on        the same substrate having an insulating surface;    -   forming one or a plurality of said semiconductor regions in said        group; and    -   forming said semiconductor region mainly by the monocrystal-like        or the substantially monocrystal region;    -   wherein, between one of said plurality of groups and other        groups, main crystal axes in said monocrystal-like or        substantially monocrystal-like region are substantial identical        to each other, and rotating angles with said crystal axes as a        center are different from each other; and wherein said        semiconductor region contains metal elements that promotes the        crystallization of silicon at a density of 1×10¹⁴ to 3×10¹⁸ atms        cm⁻³ therein.

A specified example with the above-mentioned structure is shown in FIG.9. What is shown in FIG. 9 is an example in which four monocrystal-likeor substantially monocrystal-like regions are formed by crystal growthfrom four crystal seeds which are indicated by reference numerals 600,602, 606 and 609. In FIG. 9, reference numerals 604 and 611 denote themonocrystal-like or substantially monocrystal-like regions. Also,reference numeral 601 denotes a boundary portion at a top of crystalgrowth, and reference numeral 603 denotes a grain boundary which isformed by making crystal growth collide with each other.

Reference numerals 605 and 607 denote island-like semiconductor regionswhich are obtained by patterning the monocrystal-like or substantiallymonocrystal-like region obtained by crystal growth from seed crystal.

In FIG. 9, one group is constituted by semiconductor regions 605 and 607which are constituted using a region that grows from the crystal seed606. In the group, the crystal axes are substantially identical to eachother. Also, rotating angles with their crystal axes as a center aresubstantially identical to each other. This results from growth from thesame crystal seed.

Hereinafter, the concept of a crystal axis and a concept of rotationwith its crystal axis as a center will be described. What is shown inFIG. 8 is a crystal axis 501 of a monocrystal-like region orsubstantially monocrystal-like region 503. The crystal axis 501 has, forexample, a value of an axial orientation <111> or an axial orientation<100>.

The identity of a crystal axis is defined as an angle of its deviationbeing within ±10°. Also, the identity of a rotating angle around thecrystal axis is defined as being within ±10° with a reference of aspecified angle.

In general, a plurality of monocrystal-like regions or substantiallymonocrystal-like regions formed on the same substrate using the sameforming method commonly have the same crystal axis.

Hereinafter, this phenomenon will be described with reference to anexample shown in FIG. 9. First, crystal seeds 600, 602, 606 and 609 areobtained from one starting film as shown by its manufacturing process inFIG. 5. In one film, the orientations of crystal axes are substantiallyidentical to each other. It should be noted that the orientation ofcrystal axis is not limited by or to the above description in a finecrystal state where one crystal grain is small.

Then, the monocrystal-like regions or substantially monocrystal-likeregions that have grown from seeds having the same crystal axis alsocommonly have the same crystal axis. Hence, the four monocrystal-likeregions and substantially monocrystal-like regions shown in FIG. 9 areidentical in crystal axis.

On the other hand, the crystal seeds 600, 602, 606 and 609 are obtainedfrom different crystal grains, that is, different monocrystal-likeregions or substantially monocrystal-like regions. In this case, sincethose crystal seeds are obtained from the same starting film, theycommonly have the same crystal axis (501 in FIG. 8). However, itscrystal structure as obtained is such that a crystal grain rotates withthe crystal axis 501 as a center in an orientation indicated byreference numeral 502. It is needless to say that although crystal seedshaving the same rotating orientation are obtained by accident, therotating angle in an orientation indicated by reference numeral 502 isgenerally different depending on the crystal grain.

This is understandable from the fact that the grain boundary is notformed in principle in the case where the respective crystal grainscommonly have the same crystal axis 501, and the rotating anglesindicated by reference numeral 502 are identical to each other.

Also, the reason why a silicon film consisting of a large number ofcrystal grains (one crystal grain is regarded as a monocrystal) can begenerally obtained is considered to be a result from the fact that, inthe respective crystal grains, although the crystal axes are identicalto each other (this can be recognized by the x-ray diffraction or theelectron ray diffraction), the rotating angles are different asindicated by reference numeral 502 in FIG. 8 with its crystal axis as acenter.

It should be noted that, in a stated shown in FIG. 9, even though thecrystal axes of the crystal seeds 606 and 609 are identical to eachother and the rotating angles with their axes as a center are identicalto each other, a grain boundary shown in reference numeral 603 isactually caused to be formed with some difference. This is becauseoxygen, carbon and further a small amount of metal exist in an amorphoussilicon film which has been formed through the vapor phase technique,and those impurities are deposited at a top of crystal growth.

In a state shown in FIG. 9, the semiconductor regions 605 and 607constitute one group, and the semiconductor regions 608 and 610constitute another group. In those groups, although their crystal axes(as defined in FIG. 8) are identical or substantially identical to eachother, the rotating directions of their crystal axes (as defined byreference numeral 502 in FIG. 8) are different from each other.

It should be noted that, if the crystal seeds 606 and 609 are obtainedfrom the same monocrystal-like region or substantially monocrystal-likeregion, not only the crystal axes of those two groups but also theirrotating angles are identical to each other.

Also, the monocrystal-like region or substantially monocrystal-likeregion contains metal elements that Promote the crystallization ofsilicon at a density of 1×10¹⁴ to 3×10¹⁸ atms cm⁻³ therein. Also, therange of density has a mean value of 1×10¹⁵ to 3×10¹⁹ atms cm⁻³. Thosedensities are obtained through SIMS (secondary ion measuring system) orobtained on the basis of their data.

In general, in the measurement of a metal density through the SIMS, itis hard to measure the order of 10¹⁴ cm⁻³. However, the density of metalelements in the monocrystal-like regions or the substantiallymonocrystal-like regions 307 and 308 can be estimated in the order of10¹⁴ cm⁻³ from a relationship between the density of the metal elementscontained in the seed crystal 304 and the density of metal elements inthe semiconductor regions 307 and 308 obtained by crystal growth fromthe seed crystal 304 in FIG. 5.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   providing a plurality of groups having a semiconductor region on        the same substrate having an insulating surface;    -   forming a plurality of said semiconductor regions in said        groups; and    -   forming said semiconductor region mainly by a monocrystal-like        or substantially monocrystal-like region;    -   wherein, between one of said plurality of groups and other        groups, main crystal axes in said monocrystal-like or        substantially monocrystal-like regions are substantially        identical to each other, and rotating angles with said crystal        axes as a center are different from each other; and wherein, in        one of said plurality of groups, main crystal axes in said        monocrystal-like or substantially monocrystal-like regions in        said plurality of semiconductor regions are substantially        identical to each other, and rotating angles with said crystal        axes as a center are identical to each other.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   providing a plurality of groups having a semiconductor region on        the same substrate having an insulating surface;    -   forming a plurality of said semiconductor regions in said        groups; and    -   forming said semiconductor region mainly by a monocrystal-like        or substantially monocrystal-like region;    -   wherein, between one of said plurality of groups and other        groups, main crystal axes in said monocrystal-like or        substantially monocrystal-like regions are substantially        identical to each other, and rotating angles with said crystal        axes as a center are different from each other; wherein, in one        of said plurality of groups, main crystal axes in said        monocrystal-like or substantially monocrystal-like regions in        said plurality of semiconductor regions are substantially        identical to each other, and rotating angles with said crystal        axes as a center are identical to each other; and wherein said        semiconductor region contains metal elements that promote the        crystallization of silicon at a density of 1×10¹⁴ to 3×10¹⁸ atms        cm⁻³ therein.

A specified example with the above-mentioned structure is shown in FIG.9. In FIG. 9, a pair of semiconductor regions constituted by fourmonocrystal-like regions or substantially monocrystal-like regions,which have grown from seed crystals 602, 600, 606 and 609 are formed onthe same substrate. Those semiconductor regions are indicated byreference numerals 605 and 607.

The pair of semiconductor regions constitute one group. For example, thesemiconductor regions 605 and 607 constitute one group whereas thesemiconductor regions 608 and 610 constitute the other group.

In a relationship between those two groups, main crystal axes aresubstantially identical to each other, but their rotating angles aredifferent from each other. Also, the semiconductor regions 605 and 607in one group commonly have the same crystal axis and the substantiallysame rotating angle with their crystal axis as a center.

The semiconductor regions 605 and 607 are constituted by themonocrystal-like or substantially monocrystal-like regions.

Further, in order to obtain a crystalline silicon film with an excellentreproducibility, according to the present invention, there is provided adevice for manufacturing a semiconductor device, which comprises:

-   -   a first airtight chamber for subjecting an amorphous silicon        film formed on a substrate having an insulating surface to a        plasma processing to eliminate hydrogen in the amorphous silicon        film;    -   a second airtight chamber having means for irradiating a laser        beam to said silicon film; and    -   a third airtight chamber commonly connected to said first        airtight chamber and said second airtight chamber, for        transporting said substrate.

A structural example of a specified semiconductor device having theabove-mentioned structure is shown in FIG. 12. In the structure shown inFIG. 12, reference numeral 902 corresponds to the first airtight chamberin the above-mention ed structure. The airtight chamber indicated byreference numeral 902 is a chamber for subjecting an amorphous siliconfilm formed on a substrate to a plasma processing through ECR plasma ina state the amorphous silicon film is isolated from an external. Thisplasma processing is conducted to eliminate hydrogen in the silicon filmas much as possible to realize a state in which crystallization isliable to progress.

Reference numeral 904 corresponds to the second airtight chamber. Inthis chamber, a step of crystallizing the silicon film which has beensubjected to the plasma processing in advance is conducted by theirradiation of a laser beam while heating.

Reference numeral 905 corresponds to the third airtight chamber in theabove-mentioned structure. This airtight chamber is provided with arobot arm 922, and has a function of transporting a substrate to beprocessed in atmosphere (preferably in a high vacuum state) which isisolated from the external.

It should be noted that, in the present invention, it is normal to use aglass substrate as a substrate. However, a semiconductor substrate, ametal substrate or the like may be used.

According to the present invention, there is provided a device formanufacturing a semiconductor device, which comprises:

-   -   a first airtight chamber having means for forming an insulating        film on a substrate having an insulating surface;    -   a second airtight chamber having means for forming an amorphous        silicon film;    -   a third airtight chamber for subjecting the amorphous silicon        film to a plasma processing to eliminate hydrogen in the        amorphous silicon film;    -   a fourth airtight chamber having means for heating; and    -   a fifth airtight chamber commonly connected to said first to        fourth airtight chambers, for transporting said substrate.

A specified example C in the above-mentioned structure is shown in FIG.15. In the structure shown in FIG. 15, reference numeral 1002corresponds to the first airtight chamber in the above-mentionedstructure. This airtight chamber has a function of forming a siliconoxide film on a glass substrate through the plasma CVD technique. Itshould be noted that a silicon nitride film or an oxidized siliconnitride film may be formed for the insulating film, except for thesilicon oxide film.

In the structure shown in FIG. 15, reference numeral 1003 corresponds tothe above-mentioned second airtight chamber. This airtight chamber hasthe fore-mentioned function through the plasma CVD technique.

In the structure shown in FIG. 15, reference numeral 1004 corresponds tothe above-mentioned third airtight chamber. This airtight chamber has afunction of subjecting an amorphous silicon film on a silicon oxide filmwhich has been formed in the second airtight chamber 1003 in advance toa plasma processing through ECR plasma.

In the structure shown in FIG. 15, reference numerals 1005 and 1006correspond to the above-mentioned fourth airtight chambers. The airtightchambers have a function of crystallizing the silicon film which hasbeen subjected to the plasma processing in the third airtight chamber1004 in advance, by heating in a state where the silicon film isisolated from the external.

According to the present invention, there is provided a method ofmanufacturing a semiconductor device, which comprises the steps of:

-   -   subjecting an amorphous silicon film formed on a substrate        having an insulating surface to a plasma processing to eliminate        hydrogen in the amorphous silicon film; and    -   giving an energy to said silicon film to change said silicon        film into a crystalline silicon film;    -   wherein said two steps are conducted in a space which is        isolated from an external and has an airtightness.

In the above-mentioned structure, as a method of giving an energy, thereare a method of irradiating a laser beam, a method of heating, a methodof using a laser beam and a heating together, and a method ofalternately conducting the irradiation of a laser beam and a heating.

The amorphous silicon film which has been formed through the vapor phasetechnique is exposed to hydrogen plasma or helium plasma, thereby beingcapable of eliminating hydrogen coupled to silicon in the amorphoussilicon film to the exterior. Then, the rate of binding silicon to eachother is increased so that silicon can be changed from an amorphoussilicon state to a quasi-crystalline state. This state is a state wherethere exist a large amount of binding of silicon atoms exist, and alsothere exists binding of silicon atoms to each other in a very smalllevel. Then, silicon in the quasi-crystalline state can be readilycrystallized by the application of a thermal energy or laser lightenergy.

The crystalline silicon film which has been crystallized by thistechnique can partially form a monocrystal-like region or substantiallymonocrystal-like region.

Furthermore, in the present invention, the amorphous silicon film ispatterned and crystallized, thereby being capable of forming themonocrystal-like region or substantially monocrystal-like region as aseed. Then, an amorphous silicon film is again formed and dehydrogenatedthrough another plasma processing. In this process, the amorphoussilicon film comes into a state where it is liable to be crystallized(quasi-crystalline state). Crystal growth can be made from theabove-mentioned seed by the application of a thermal energy or a lightenergy such as a laser beam. In this situation, the crystal growthprogresses from a portion of the above-mentioned monocrystal-like seedor the substantially monocrystal-like seed so that a predeterminedregion of the amorphous silicon film can be changed into monocrystal ora monocrystal-like region.

Also, the amorphous silicon film is so patterned as to first form aregion which will form a seed later. Then, the amorphous silicon filmmay be subjected to a plasma processing and the application of an energyso as to be crystallized, to thereby form a seed of crystal growth. Inthis case, since the amorphous silicon film is patterned into fineregions before being subjected to a dehydrogenating process and acrystallizing process, their interiors can more effectively form themonocrystal-like seed or the substantially monocrystal-like seed.

In particular, with the use of a metal element that promotes thecrystallization of silicon, their interior readily can form themonocrystal-like seed or the substantially monocrystal-like seed.

What is particularly useful for the present invention is that a seedportion can be selectively formed on a required region. Then, crystalgrowth is conducted from that seed, whereby the monocrystal-like regionor the substantially monocrystal-like region can be formed in therequired region.

Utilizing this feature, a thin-film transistor or other thin-filmsemiconductor devices utilizing the monocrystal-like region or thesubstantially monocrystal-like region can be formed on a requiredregion.

Also, in the device for manufacturing the semiconductor device inaccordance with the present invention, a plasma processing step ofpromoting the elimination of hydrogen from the amorphous silicon filmwhich is formed on the substrate having an insulating surface, and astep of changing the amorphous silicon film into a crystalline siliconfilm by the application of an energy after the above step has beenconducted, are continuously conducted in a space which is isolated fromthe exterior without being in contact with air or contaminatedatmosphere, thereby being capable of removing an influence of anexternal factor in the steps for obtaining the crystalline silicon film.

As described above, with the promotion of the elimination of hydrogenfrom the amorphous silicon film, the binding of silicon to each other inthe amorphous silicon film can be promoted, thereby being capable ofmore enhancing the degree of order of a crystal structure.

However, this state is very unstable and very sensitive to the externalfactor which is represented by contamination.

Therefore, as described above, the plasma processing step and thesubsequent crystallizing step are continuously conducted, thereby beingcapable of realizing a process that removes the above-mentioned externalfactor and which is high in reproducibility.

Also, the formation of the amorphous silicon film, a process ofpromoting the elimination of hydrogen from the amorphous silicon film,and the crystallization of the silicon film from which the eliminationof hydrogen is promoted are continuously conducted in a space which isisolated from the external, thereby being capable of restraining thedispersion (the nonuniformity of a crystalline property and thedispersion of the electric characteristic) in the crystallizing process,which is caused by the external factor.

Further, a processing chamber in which the elimination of hydrogen fromthe amorphous silicon film is promoted, and a processing chamber inwhich the silicon film from which the elimination of hydrogen has beenpromoted is crystallized are coupled to a transportation chamber fortransporting a substrate, and the above processing and thetransportation of the substrate are conducted in a state where it isisolated from the external, thereby being capable of obtaining constantprocessing effects with respect to a plurality of substrates. In otherwords, the crystalline silicon film which is uniform in crystallineproperty for each substrate can be obtained. Further, a highproductivity can be obtained.

The above and other objects and features of the present invention willbe more apparent from the following description taken in conjunctionwith the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a device for processing a plasmaprocessing;

FIGS. 2A to 2D are diagrams showing a process of manufacturing athin-film transistor;

FIGS. 3A to 3D are diagrams showing a process of manufacturing athin-film transistor;

FIG. 4 is a diagram showing a process of manufacturing a thin-filmtransistor;

FIGS. 5A to 5E are diagrams showing a monocrystal-like region or asubstantially monocrystal-like region;

FIGS. 6A to 6D are diagrams showing a process of manufacturing athin-film transistor;

FIGS. 7A to 7D are diagrams showing a process of manufacturing athin-film transistor;

FIG. 8 is a diagram for defining a crystal axis and a rotating anglewith the crystal axis as a center;

FIG. 9 is a diagram showing four monocrystal-like regions orsubstantially monocrystal-like regions;

FIGS. 10A and 10B are diagrams showing a pattern of a semiconductorregion constituting a thin-film transistor, respectively;

FIGS. 11A and 11B are diagrams showing a state of crystal growth from aregion which forms a seed of crystal growth and a pattern of asemiconductor region obtained by patterning;

FIG. 12 is a schematic diagram showing an outline of a device forcontinuously conducting a plasma processing and the irradiation of alaser beam;

FIG. 13 is a schematic diagram showing an outline of a device forcontinuously conducting a plasma processing and the irradiation of alaser beam;

FIG. 14 is a schematic diagram showing an outline of a device forcontinuously conducting a plasma processing and the irradiation of alaser beam;

FIG. 15 is a schematic diagram showing an outline of a device forcontinuously conducting a plasma processing and a heating process;

FIG. 16 is a diagram showing an outline of a device for conducting aplasma processing;

FIG. 17 is a diagram showing a means for generating a magnetic field;and

FIG. 18 is a diagram showing a state of a magnetic field generationmeans and gas introducing means 2005 viewed from a substrate stage 2005side.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, a description will be given in more detail of embodiments of thepresent invention with reference to the accompanying drawings.

First Embodiment

A first embodiment relates to a structure in which a crystalline siliconfilm is formed on a glass substrate. First, a silicon oxide film isformed on a glass substrate as an under layer. The silicon oxide filmfunctions to relieve the diffusion of impurities in the glass substrateand a stress produced between the glass substrate and a semiconductorfilm. The silicon oxide film may be formed at a thickness of about 3000Å through the plasma CVD technique or the sputtering technique.

Then, an amorphous silicon film is formed on the silicon oxide film. Theamorphous silicon film may be formed through the plasma CVD technique orthe decompression thermal CVD technique. The thickness of the amorphoussilicon film may be set to a required value, but is set to 500 Å in thisembodiment.

After the formation of the amorphous silicon film, a hydrogen plasma isproduced under decompression through a technique using a magnetic fieldand a microwave, and the above-mentioned amorphous silicon film formedon the glass substrate is subjected to a plasma processing through theplasma. In this example, a hydrogen gas is changed into plasma under theECR condition.

FIG. 1 shows an outline of a device for generating the ECR condition.The device shown in FIG. 1 is a device for generating high-densityplasma by forming the ECR condition in accordance with an interactionbetween a microwave of 2.45 GHz which is generated at an oscillator 104and a magnetic field which is generated at a magnet 102.

For conducting a plasma processing, a substrate (sample) is firstdisposed on a substrate holder 106, and an exhaust pump 105 allows theinterior of a chamber 103 to come into a predetermined decompressionstate. In this situation, a substrate position adjusting bar 108 ismanipulated so that a substrate 107 is moved to a region that justsatisfies the ECR condition. The intensity of the magnetic field at thatposition is 875 gauss that just satisfies the ECR condition by theinteraction between the magnetic field and the microwave of 2.45 GHz.Also, during the plasma processing, the substrate 107 can be heated by aheater disposed within the substrate holder. Since hydrogen ions (orhelium) are negative ions, hydrogen ions (or helium ions) can be drawntoward the substrate side from plasma by the application of a negativebias voltage to the substrate holder, thereby being capable of furtherenhancing the effect of a plasma processing.

Hydrogen which has been changed into plasma under the ECR condition isvery high in plasma density. When the amorphous silicon film is exposedto such hydrogen plasma, hydrogen atoms in the amorphous silicon film iscoupled to active hydrogen atoms in plasma, the hydrogen atoms in theamorphous silicon film is eliminated outside of the film.

With the elimination of hydrogen in the amorphous silicon film, such astate that the binding bonds of silicon are liable to be bound to eachother can be realized. This state can be also regarded as aquasi-crystalline state, and is a state where crystallization is liableto remarkably progress by the application of an energy from theexternal.

During the above-mentioned plasma processing, it is very effective toheat a sample. The heating is effectively conducted at a temperature of300 to 500° C. which is a temperature at which the amorphous siliconfilm is not crystallized.

After the plasma processing has been finished, a heat treatment isconducted on the amorphous silicon film, to thereby obtain a crystallinesilicon film. This heat treatment is conducted at a temperature of from400° C. to a strain point of the glass substrate for several to tenhours. In this example, a crystalline silicon film is obtained byconducting a heat treatment at a temperature of 550° C. for 5 hours. Inthis way, the crystalline silicon film can be obtained on the glasssubstrate.

Second Embodiment

A second embodiment relates to a structure in which a crystallinesilicon film is formed on a glass substrate, using the catalysis of ametal element. First, a silicon oxide film is formed on a glasssubstrate as an under layer. The silicon oxide film functions to relievethe diffusion of impurities in the glass substrate and a stress producedbetween the glass substrate and a semiconductor film. The silicon oxidefilm may be formed at a thickness of about 3000 Å through the plasma CVDtechnique or the sputtering technique.

Then, an amorphous silicon film is formed on the silicon oxide film. Theamorphous silicon film may be formed through the plasma CVD technique orthe decompression thermal CVD technique. The thickness of the amorphoussilicon film may be set to a required value, but is set to 500 Å in thisembodiment.

After the formation of the amorphous silicon film, metal elements thatpromote the crystallization of silicon is held in contact with thesurface of the amorphous silicon film. In this example, nickel is usedas the metal elements. Then, nickel elements are introduced onto thesurface of the amorphous silicon film using a nickel acetate solutionwhich is a solution containing nickel therein. Also, a surface activeagent is mixed with the nickel acetate solution in such a manner thatnickel atoms are dispersed in the solution.

Specifically, a nickel acetate solution which is adjusted to apredetermined nickel density is coated on the surface of the amorphoussilicon film, and an excessive solution is blown off by a spinner withthe result that the nickel elements are held in contact with the surfaceof the amorphous silicon film.

In this way, in case of introducing the metal elements that promote thecrystallization of silicon by using a solution, the density of the metalelements that finally remain in the silicon film is readily controlled.In other words, the density of the metal elements that remain in thesilicon film after the crystallization has been finished can bedetermined by controlling the density of the metal elements in thesolution. This is very important from the viewpoint that the existenceof the metal elements impedes the semiconductor property of silicon.

As a result of observing a state in which the metal elements are held incontact with the surface of the amorphous silicon film, it has beenfound that the metal elements exist in a state where they are uniformlydispersed on the surface of the amorphous silicon film. The applicationof the plasma CVD technique or the sputtering technique makes it hard toform a very thin film. Hence, it is difficult to hold the metal elementsso as to be uniformly dispersed.

It should be noted that the metal elements need to finally exist at adensity of 1×10¹⁵ to 5×10¹⁵ atms cm⁻³ in the silicon film. This isbecause the crystallization action cannot be obtained under thecondition where the density is lower than the above range, and thesemiconductor characteristic of silicon is lost under the conditionwhere it is higher than the above range.

After the formation of the amorphous silicon film, a hydrogen plasma isproduced under decompression through a technique using a magnetic fieldand a microwave, and the above-mentioned amorphous silicon film formedon the glass substrate is subjected to a plasma processing through theplasma. In this example, a hydrogen gas is changed into plasma under theECR condition, using the ECR device shown in FIG. 1 as in the firstembodiment.

Hydrogen which has been changed into plasma under the ECR condition isvery high in plasma density. When the amorphous silicon film is exposedto such hydrogen plasma, hydrogen atoms in the amorphous silicon film iscoupled to active hydrogen atoms in plasma, the hydrogen atoms in theamorphous silicon film is eliminated outside of the film.

With the elimination of hydrogen in the amorphous silicon film, such astate that the binding bond of silicon are liable to be bound to eachother can be realized. This state can be also regarded as aquasi-crystalline state, and is a state where crystallization is liableto remarkably progress by the application of an energy from theexternal.

During the above-mentioned plasma processing, it is very effective toheat a sample. The heating is effectively conducted at a temperature of300 to 500° C. which is a temperature at which the amorphous siliconfilm is not crystallized.

After the plasma processing has been finished, a heat treatment isconducted on the amorphous silicon film, to thereby obtain a crystallinesilicon film. This heat treatment is conducted at a temperature of from400° C. to a strain point of the glass substrate for several to tenhours. In this example, a crystalline silicon film is obtained byconducting a heat treatment at a temperature of 550° C. for 5 hours. Inthis way, the crystalline silicon film can be obtained on the glasssubstrate.

Third Embodiment

A third embodiment relates to a structure in which the order of aprocess of introducing the metal elements that promote thecrystallization of silicon and a process of the plasma processing arereversed in the processes described in the second embodiment. In otherwords, a plasma processing is conducted after the formation of theamorphous silicon film, and thereafter a plasma processing is conductedon the silicon film which has been plasma processing. With thoseprocesses, the inside of a chamber for conducting the plasma processingcan be prevented from being contaminated by the metal elements.

Fourth Embodiment

A fourth embodiment is characterized in that, in the structuresdescribed with reference to the first to third embodiments, acrystallization process after the plasma processing has been finished isconducted by a method in which heating and the irradiation of a laserbeam are conducted together.

First, a plasma processing is conducted on an amorphous silicon filmthrough a method described in the first or second embodiment.Alternatively, nickel elements (it is needless to say that otherpredetermined metal elements are also available) are introduced onto asilicon film which has been subjected to a plasma processing asdescribed in the third embodiment.

Then, after the plasma processing has been finished, a laser beam isirradiated onto the amorphous silicon film while heating. The heating isconducted desirably at a temperature as high as possible, which is astrain point of the glass substrate or lower. For example, in case ofusing a Corning glass substrate as a glass substrate, an upper limit ofthe heating temperature is set to 593° C. This is because a strain pointof the Corning Glass substrate is 593° C.

It is preferable to use a laser beam in an ultraviolet region. In thisexample, a KrF excimer laser (wavelength of 248 nm) is used. A laserbeam may be replaced by an intense light beam.

With conducting the irradiation of a laser beam and heating together, acrystalline silicon film having a high crystalline property can beobtained. The crystalline silicon film obtained is uniform and excellentin reproducibility. This is because a rapid change in phase inaccordance with the irradiation of a laser beam is relieved byconducting the heat treatment together.

Fifth Embodiment

A fifth embodiment is to conduct a plasma processing not throughhydrogen plasma but through helium plasma in the structure described inthe first or second embodiment.

A large amount of binding of silicon and hydrogen exist in the amorphoussilicon film. This state is generally called a Si—H binding that has arelatively high binding force. In order to eliminate hydrogen from theamorphous silicon film, there is required an energy by which the Si—Hibinding is cut, and hydrogen atoms are drawn apart from silicon atoms.

This embodiment is characterized by using an energy of helium plasma asthat energy. An ionization energy of helium is high, and its plasma hasa large energy. Hence, using helium plasma, an energy can be supplied tohydrogen atoms which are coupled to silicon in the amorphous siliconfilm, as a result of which hydrogen atoms can be effectively eliminatedfrom the inside of the amorphous silicon film.

Similarly, in this embodiment, the ECR condition is applied as a methodof generating plasma. In the structure shown in this embodiment, it isvery useful to conduct a heating at a temperature of 300 to 500° C.simultaneously during the helium plasma processing. With conducting theheating, hydrogen atoms are eliminated from silicon atoms to whichhydrogen atoms are coupled, thereby being capable of promoting bindingof silicon atoms together.

Sixth Embodiment

A sixth embodiment exhibits an example in which a thin-film transistoris manufactured using a crystalline silicon film which has beenmanufactured through a plasma processing in accordance with the presentinvention. First, a silicon oxide film 202 that functions as an underlayer and has a thickness of 3000 Å is formed on a glass substrate 201through the sputtering technique. Then, an amorphous silicon film 203having a thickness of 500 Å is formed on the silicon oxide film 202through the plasma CVD technique or the decompression thermal CVDtechnique.

Then, using the device shown in FIG. 1, a plasma processing is conductedon the amorphous silicon film 203. In this example, helium is used as agas. In the plasma processing, the glass substrate in a state shown inFIG. 2A is disposed at a portion, which is indicated by referencenumeral 107, of the device shown in FIG. 1.

It should be noted that the position of the substrate is adjusted bymanipulating an adjusting bar 108 in such a manner that the ECRcondition is just satisfied at the position of the substrate. The plasmaprocessing is conducted in a state where the substrate is heated at atemperature of 400° C. It should be noted that the heating is conductedby a heater installed within a substrate holder 106.

After the plasma processing has been conducted, a heat treatment at 550°C. for 5 hours is conducted in the nitrogen atmosphere, to therebycrystallize the amorphous silicon film 203. Then, the substrate is takenout from the device shown in FIG. 1, and an active layer of a thin-filmtransistor is formed by patterning. In this way, the active layer 204 ofthe thin-film transistor is formed (FIG. 2B).

Subsequently, a silicon oxide film 205 that functions as a gateinsulating film and has a thickness of 1000 Å is formed on the surfacethrough the plasma CVD technique or the sputtering technique.Thereafter, a film that mainly contains aluminum for constituting a gateelectrode and has a thickness of 6000 Å is formed on the silicon oxidefilm 205. The film forming method may be of the sputtering technique orthe electron beam vapor deposition technique. Then, a gate electrode 206is formed by patterning. Furthermore, anodic oxidation is conducted withthe gate electrode 206 as an anode in the electrolyte, to thereby forman anodic oxide layer 207 around the gate electrode 206. The thicknessof the anodic oxide layer is set to 2000 Å. In this way, a state shownin FIG. 2B is obtained.

Subsequently, impurity ions for the formation of source and drainregions are accelerated and implanted through the ion implantationtechnique or the plasma doping technique. In this process, impurity ionsare implanted in regions 208 and 211 with the gate electrode 206 and theperipheral anodic oxide layer 207 as a mask. In this example, p(phosphorus) ions are implanted for manufacturing an n-channel thin-filmtransistor. Impurity ions are not implanted in a region 209 with theanodic oxide layer 207 as a mask. Similarly, impurity ions are notimplanted in a region 210 with the gate electrode 206 as a mask.

After the implantation of impurity ions, the activation of the implantedimpurity ions and annealing of a region into which impurity ions areimplanted are conducted by the irradiation of a laser beam. In this way,the source region 208 and the drain region 211 are formed in aself-alignment manner. Simultaneously, the region 209 forms an offsetgate region, and the region 210 forms a channel formation region (FIG.2C).

Subsequently, a silicon oxide film 212 having a thickness of 6000 Å isformed as an interlayer insulating film. The silicon oxide film 212 isformed through the plasma CVD technique. The, contact holes are formedfor the formation of a source electrode 213 and a drain electrode 214.Furthermore, a heat treatment is conducted in the hydrogen atmosphere at350° C. for one hour, to thereby complete a thin-film transistor shownin FIG. 2D.

It should be noted that, in crystallizing the amorphous silicon film203, a metal element that promotes the crystallization of the siliconfilm can be used. FIG. 4 shows a process for obtaining the crystallinesilicon film using nickel elements. It should be noted that the samereference numerals as those in FIG. 2 are representative of likemembers.

First, a silicon oxide film 202 that functions as an under layer and hasa thickness of 3000 Å is formed on a glass substrate 201 through thesputtering technique. Then, an amorphous silicon film 203 having athickness of 500 Å is formed on the silicon oxide film 202 through theplasma CVD technique or the decompression thermal CVD technique. Nickelelements are held in contact with the surface of the amorphous siliconfilm 203, using a nickel acetate solution. In this example, the nickelacetate solution which is adjusted to a predetermined nickel density iscoated on the surface of the amorphous silicon film, and an excessivesolution is removed by a spinner with the result that the nickelelements are held in contact with the surface of the amorphous siliconfilm 203. The nickel elements held in contact with the surface of theamorphous silicon film 203 are held in a dispersed state. In FIG. 4,what is indicated by reference numeral 200 is a nickel element which isheld in contact with the surface of the amorphous silicon film 203. Inthis way, a state shown in FIG. 4 is obtained.

It should be noted that the layer 200 containing nickel elements thereincan be formed on the surface of the amorphous silicon film 203 byallowing an organic binder or the like to be contained in the solution.In this situation, it is necessary that attention is paid so that nickelelements are dispersed in the layer.

Then, using the device shown in FIG. 1, a plasma processing is conductedon the amorphous silicon film 203. In this example, helium is used as agas. In the plasma processing, the glass substrate in the state shown inFIG. 4 is disposed at a portion, which is indicated by reference numeral107, of the device shown in FIG. 1.

It should be noted that the position of the substrate is adjusted bymanipulating an adjusting bar 108 in such a manner that the ECRcondition is satisfied just at the position of the substrate. The plasmaprocessing is conducted in a state where the substrate is heated at atemperature of 400° C. It should be noted that the heating is conductedby a heater installed within a substrate holder 106.

After the plasma processing has been conducted, a heat treatment at 550°C. for 5 hours is conducted in the nitrogen atmosphere, to therebycrystallize the amorphous silicon film 203. Then, the substrate is takenout from the device shown in FIG. 1, and an active layer of a thin-filmtransistor is formed by patterning. In this way, the active layer 204 ofthe thin-film transistor is formed. Thereafter, a thin-film transistoris completed in accordance with processes shown in FIG. 2C andsubsequent figures.

Seventh Embodiment

A manufacturing process according to a seventh embodiment is shown inFIG. 3. This embodiment is characterized by conducting a plasmaprocessing after the amorphous silicon film has been patterned in theprocess of manufacturing the thin-film transistor shown in FIG. 2. Itshould be noted that the manufacturing conditions and so on areidentical to those described in the fifth embodiment the manufacturingprocess of which is shown in FIG. 2, so tar as there is no specialnotice.

First, as shown in FIG. 3A, a silicon oxide film 202 is formed on aglass substrate 210 as an under layer. Next, an amorphous silicon film(not shown) is formed on the silicon oxide film 202. Then, a region 204which constitutes the active layer of the thin-film transistor is formedby patterning (FIG. 3A).

In this state, a processing using hydrogen plasma is conducted with thedevice shown in FIG. 1. As a result, the hydrogen plasma processing isconducted on not only the upper surface of the active layer but also theside surfaces of the active layer.

Thereafter, crystallization is conducted through a heat treatment. Also,as occasion demands, annealing is conducted by the irradiation of alaser beam or an intense light beam. In this state, the crystallizationof the active layer at its side can be promoted.

It should be noted that a metal element that promotes thecrystallization of silicon can be introduced before the heat treatmentor the formation of an active layer. In this example, nickel is used asthe metal element, and nickel elements are held in contact with thesurface of the active layer and exposed side surfaces thereof.

In the above manner, after a state shown in FIG. 3A is obtained, athin-film transistor is completed in accordance with the same process asthat shown in FIG. 2B which was described in the fourth embodiment. Inother words, the process shown in FIG. 3B is identical to that shown inFIG. 2B. Also, a process shown in FIG. 3C is identical to that shown inFIG. 2C. Further, a process shown in FIG. 3D is identical to that shownin FIG. 2D.

When the structure shown in this embodiment is applied, an off-statecurrent of the thin-film transistor can be reduced. The “off-statecurrent” means that a current unavoidably flows between the source andthe drain in an n-channel thin-film transistor when a minus potential isapplied to the gate electrode (that is, in the-off-state operation).This current is caused by the movement of carries in accordance with anelectric field which is applied between the source and the drain.

In the insulated gate thin-film transistor, while a minus potential isbeing applied to the gate electrode, a channel becomes p-type.Therefore, since npn is formed between the source and the drain, nocurrent flows in principle. However, since the existence of a trap levelcauses the movement of carriers via the trap level, a fine currentflows. In particular, a large number of defects caused when patterningexist on the side surfaces of the active layer, the trap level has ahigh density. Under this circumstance, according to this embodiment, aplasma processing is conducted after the active layer has been patternedso that a quasi-crystallization is made to progress with the result thatan influence of the trap level on the side surfaces of the active layercan be restrained.

In this manner, the crystallization of the active layer on the sidesurfaces is improved, thereby being capable of reducing the trap levelof the active layer on the side surfaces thereof. As a result, themovement of carriers via the trap level of the active layer on the sidesurfaces thereof can be restrained.

Eighth Embodiment

An eighth embodiment relates to a process of crystallizing an amorphoussilicon film after a plasma processing has been conducted. In thepresent invention, as methods of crystallizing the amorphous siliconfilm after the plasma processing has been conducted, there are a heatingmethod, a method of irradiating a laser beam while heating, a method ofirradiating a laser beam after heating, a method of irradiating a laserbeam after heating and further heating, and a method of repeatedlyconducting heating and the irradiation of a laser beam in a plurality oftimes.

This embodiment is characterized in that a crystalline silicon film isobtained by conducting a heating after a plasma processing has beenfinished, the crystalline property of the silicon crystalline film isimproved by conducting the irradiation of a laser beam while heating,and defects in the film are reduced by conducting a heat treatment.

The crystalline silicon film which has been obtained by conducting theheat treatment on the amorphous silicon film which has been processed bythe exposure to hydrogen or helium plasma contains amorphous componentsat a rate of several to several tens % therein. This is recognized byobserving a photograph taken by TEM (transmission electron microscope).The remaining amorphous components can be gradually reduced by furtherconducting a heat treatment. However, a heat treatment required in thiscase must be conducted for a long period of time, that is, 10 hours orlonger. This is not preferable from the economical viewpoint. The heattreatment can be conducted at a temperature of about 550° C., but evenat a temperature of 550° C., the long-period heat treatment is notpreferable since it causes the deformation of the glass substrate.

It has been found through experiment that the remaining amorphouscomponents can be crystallized by the irradiation of a laser beam ontothe crystalline silicon film in which the above amorphous componentsremain. In other words, the crystalline property of the crystallinesilicon film can be further improved by conducting the irradiation of alaser beam after the heat treatment has been conducted.

It should be noted that it is important to heat a sample at atemperature of from 300° C. to a strain point of the substrate in theirradiation of a laser beam. In the case where the substrate is notheated, the formation of a grain boundary in accordance with a rapidchange in phase becomes remarkable so that an excellent crystal propertycannot be obtained.

However, in the case where annealing is conducted by the irradiation ofa laser beam, there arises such a problem that defects occur inaccordance with the rapid change in phase even when using theabove-mentioned method conducting the heat treatment together. Forexample, when a spin density after the irradiation of a laser beam ismeasured, it is recognized that its value is clearly increased. The spindensity is an index representative of the number of unpaired bindingband and can be understood to be representative of the number of defectsin the film.

As described above, in the case where a laser beam is irradiated on thesilicon film which has been crystallized by the heat treatment, theremaining amorphous components are crystallized, and the crystallineproperty of the film can be further enhanced. However, although thecrystalline property of the film can be enhanced, the defects in thefilm are increased. This phenomenon can be understood that, with theirradiation of a laser beam, the remaining amorphous components arecrystallized, and the crystallized components can be increased whereasdefects occur with a very small level in accordance with a rapid changein phase due to the irradiation of a laser beam.

However, present inventors has found through experiment that the defectsin the film can be reduced by further conducting a heat treatment inthis state. A sufficient effect is obtained by conducting the heattreatment at a temperature as high as possible, to an extent of a strainpoint of a substrate to be used or lower, for one hour. For example, thesufficient effect can be obtained by conducting the heat treatment at atemperature of 550° C. for one hour.

Ninth Embodiment

A ninth embodiment shows an example in which a monocrystal-like regionor a substantially monocrystal-like region is formed on a glasssubstrate. First, a silicon oxide film 302 is formed on a glasssubstrate 301 as an under layer. The silicon oxide film 302 may beformed through the sputtering technique or the plasma CVD technique. Thethickness of the silicon oxide film 302 is set to 3000 Å.

Then, an amorphous silicon film 303 is formed on the under layer throughthe plasma CVD technique or the decompression thermal CVD technique. Theamorphous silicon film 303 may have a required thickness. In thisexample, the thickness is set to 2000 Å (FIG. 5A).

Subsequently, using the plasma processing device shown in FIG. 1, aplasma processing is conducted on the amorphous silicon film 303 so asto conduct dehydrogenation from the interior of the film.

A hydrogen gas is supplied to the device shown in FIG. 1 from a gassupply system 101 to generate ECR plasma of hydrogen gas. Then, ahydrogen plasma is conducted on the amorphous silicon film 303. Also,during the plasma processing, the substrate is held at a temperature of500° C. This is to promote the dehydrogenation from the interior of thefilm. The heating of the substrate is conducted by a heater installedwithin a substrate holder 206. The temperature range can be selected ina range of from 400° C. to a strain point of the substrate. For theheating method, means such as lamp heating may be used.

An adjustment bar 208 is adjusted so that the substrate is positioned ina region where the ECR conditions are satisfied or in the vicinity ofthat region. In other words, the substrate 207 is disposed in a regionwhere the intensity of a magnetic field is 875 gauss or in the vicinityof that region. The “vicinity” in this specification is defined as arange within ±10% of the ECR conditions, more specifically, as a regionwithin ±10% of the ECR conditions with a center of the intensity of amagnetic field where the ECR conditions are satisfied.

When the plasma processing is conducted under the ECR conditions usingthe device shown in FIG. 1, such an effect that the amorphous siliconfilm is heated through microwaves can be obtained. This is because themicrowaves of 2.45 GHz are absorbed by Si—H binding. In particular,since the microwaves are absorbed by the surface of the silicon film,only the silicon film can be selectively heated. On the other hand,microwaves are hardly absorbed by the glass substrate. It should benoted that when the power of microwaves is too strong, event the glasssubstrate is heated at a high temperature by the heat conduction fromthe silicon film, to which attention must be paid.

This embodiment shows an example in which hydrogen plasma is used.Instead, helium gas plasma may be used. Also, plasma of mixed gasconsisting of hydrogen and helium may be used.

Through the plasma processing, the amorphous silicon film is changedfrom the amorphous state to more systematic state. This is a state wherecrystallization is liable to more progress with the progress ofhydrogenation. In this state, a crystalline silicon film is obtained byconducting a heat treatment at 550° C. for 5 hours. This heat treatmentis conducted at a temperature of 550 to 600° C. for 5 to 10 hours. Anupper limit of the heat treatment is defined by the strain point of asubstrate as used.

It should be noted that metal elements that promote the crystallizationof the silicon film may be added to the amorphous silicon film after theplasma processing is conducted. For example, a nickel acetate solutionwhich is adjusted to a predetermined density is coated on the siliconfilm which has been subjected to the plasma processing through the spincoating technique, The density of nickel elements is adjusted so thatthe density of nickel in a semiconductor region which has been finallyobtained (indicated by reference numerals 307 and 308 in FIG. 5E) is setto 1×10¹⁴ to 3×10¹⁸ cm⁻³, a mean value of 1×10¹⁵ to 3×10¹⁹ cm⁻³.

In this state, a crystalline silicon film is obtained by conducting aheat treatment at 550° C. for 5 hours.

After the crystalline silicon film has been obtained by the heattreatment, a portion which will constitute a seed of crystal growthlater is formed on an arbitrary location. This portion has a size of 1to 20 μm square. With this degree of size, that portion can be formedinto a monocrystal-like region or a substantially monocrystal-likeregion. In other words, that portion can be changed into a region whereno grain boundary substantially exists in the interior thereof, or cometo a state where there arises no problem even though a grain boundaryexists.

In this example, an island-like region indicated by reference numeral304 in FIG. 5 is formed by patterning. In this case, what is indicatedby reference numeral 304 is a region which is changed into a seedcrystal. That region can be constituted as a monocrystal-like region ora substantially monocrystal-like region. In this way, a state shown inFIG. 5B is obtained.

After the formation of the seed, the surface of the exposed seed need tobe cleaned (etched) by hydrofluoric acid etchant (need to containhydrofluoric acid and hydrogen), for example, a solution (called “FPM”)into which buffer hydrofluoric acid or hydrofluoric acid, excessivewater and water are mixed together. This is because an oxide film formedon the surface of the seed or a film containing carbon or nitrogentherein is removed by etching. Also, in the case where the surface ofthe silicon film is cleaned by buffer hydrofluoric acid or FPM, hydrogenis absorbed on its surface, and unpaired binding bond of silicon atomson the surface can be neutralized. Hence, oxidation or the formation ofthe film of other compounds can be restrained.

This embodiment shows an example in which one seed crystal is formed,but a plurality of seed crystals are formed on the same substrate infact. In general, in a method of crystallizing the amorphous siliconfilm, a monocrystal film cannot be formed over a large area. In otherwords, although a large-sized crystal grain can be formed one by one,the whole film that forms one crystal grain (that is, monocrystal)cannot be formed.

Similarly, in this embodiment, a number of large crystal grains areformed. Then, the seed crystal (indicated by reference numeral 304 inFIG. 5B) is formed using this crystal grain (its interior can besubstantially regarded as monocrystal).

In this case, the crystal grains are identical in their crystal axis(crystal axis perpendicular to the film) to each other, but theirrotating angles with the crystal axes as a center are different fromeach other. In other words, a number of regions having differentrotating angles with the crystal axes as a center are formed with aboundary of the grain boundaries. The orientations of the crystal axesperpendicular to the film in those regions are identical to each other.It should be noted that if the rotating angles are identical to eachother, no grain boundary can be formed, and those regions are containedin the same crystal grain. In other words, a larger crystal grain isformed (monocrystal exists as its limit).

Subsequently, an amorphous silicon film 305 is formed through the plasmaCVD technique or the decompression thermal CVD technique. In thisexample, the thickness of the amorphus silicon film 305 is set to 500 Å.In this way, a state shown in FIG. 5C is obtained. In this state, aplasma processing is further conducted. The plasma processing may be thesame as that in the formation of the seed crystal. Then, a heattreatment is again conducted. With conducting of this heat treatment,the amorphous silicon film is crystallized. The heat treatment isconducted at a temperature of 550° C. for 6 hours.

Through this heat treatment, the portion 304 is changed into a crystalnucleus, and crystal growth progresses. Through this heat treatment, theregion 306 is crystallized. In this region, crystal growth is conductedwith a nucleus of the monocrystal-like region or the substantiallymonocrystal-like region 304, and the monocrystal-like region or thesubstantially monocrystal-like region 306 is formed This region isobtained by conducting substantially circular crystal growth with acenter of the seed portion 304, viewed from the upper (FIG. 5D).

The monocrystal-like region or substantially monocrystal-like region 306is of a region having a single crystal structure such that the crystalaxes are identical to each other in a direction perpendicular to thefilm, and the rotating angles with the crystal axes as a center are alsoidentical to each other. The crystal axis is different depending on thefilm forming condition of the amorphous silicon film 303 which is astarting film. However, if the starting film which is uniformly formedon the same substrate is used, the substantially same crystal axis canbe obtained.

Also, in the above-mentioned crystallizing process, the crystal growthcan progress from the crystal seed by etching the surface of the seed ofcrystal growth with hydrofluoric acid etchant in advance. In the casewhere etching is not conducted on the surface of the crystal seed, thereproducibility of crystal growth cannot be obtained because of an oxidefilm or other compound films.

Then, the monocrystal-like region or substantially monocrystal-likeregion is subjected to a patterning, to thereby form island-like regionsindicated by reference numerals 307 and 308. In this example, twoisland-like regions are formed as shown in FIG. 5E. However, apatterning as required can be conducted in a permissible range.

As shown in FIG. 5E, two (or a plurality of) island-like semiconductorregions which have been formed as one pair have a single crystalstructure such that the crystal axes in a direction perpendicular to thefilm are identical to each other, and the rotating angles with thecrystal axes as a center are also identical to each other.

With the use of these two regions, for example, the active layer of thethin-film transistor can be formed. Then, the thin-film transistorconstituted by using those regions can obtain the same characteristic asthat of a transistor which is constituted by using a monocrystal wafer.

In FIG. 5E, there is shown an example in which the monocrystal-like orsubstantially monocrystal-like region is formed from one crystal seedand then patterned, to thereby form two island-like semiconductorregions 307 and 308. However, in the actual process, it is normal that alarge number of monocrystal-like or substantially monocrystal-likeregions are formed by a large number of crystal seeds.

FIG. 9 shows such an example. What is shown in FIG. 9 is an example inwhich four monocrystal-like regions or substantially monocrystal-likeregions are formed by crystal growth of seeds 600, 602, 606 and 609. InFIG. 9, what are indicated by reference numerals 604 and 611 are onemonocrystal-like region or substantially monocrystal-like region.

What are indicated by reference numerals 605 and 607 are semiconductorregions which are obtained by patterning the monocrystal-like region orsubstantially monocrystal-like region.

The semiconductor regions 605 and 607 in FIG. 9 correspond to a pair ofsemiconductor regions 307 and 308 in FIG. 5. The semiconductor regions605 and 607 form one group, and their crystal axes and the rotatingangles with the crystal axes as a center are identical.

The fact that the crystal axis of the semiconductor region 508 isidentical to that of the semiconductor region 504 naturally results fromthat the crystal seed formed using the same starting film is used, andthe same silicon film for crystal growth is used.

However, the rotating angle of the crystal axis of the semiconductorregion 508 and the rotating angle of the crystal axis of thesemiconductor region 504 are not generally identical to each other. Thisis because the monocrystal-like region or substantially monocrystal-likeregions that form a base of the respective semiconductor regions arecrystal grains which have grown from different crystal seeds.

Tenth Embodiment

A tenth embodiment shows an example in which a circuit with the CMOSstructure is manufactured with the use of the paired two island-likesemiconductor regions shown in the ninth embodiment. First, a stateshown in FIG. 6A is obtained through the method shown in the ninthembodiment. This state is identical to that shown in FIG. 5E.

In this state, reference numeral 307 denotes an active layer of ann-channel thin-film transistor, and 308 is an active layer of ap-channel thin-film transistor.

Subsequently, a silicon oxide film that functions as a gate insulatingfilm is formed. The silicon oxide film is formed through the plasma CVDtechnique or the sputtering technique. In this example, its thickness isset to 1000 Å. Furthermore, a film that mainly contains aluminum forconstituting the gate electrode is formed through the electron beamvapor deposition technique or the sputtering technique. The thickness ofthat film is set to 5000 Å. Next, gate electrodes 310 and 311 are formedby patterning.

After the formation of the gate electrodes, anodic oxidation isconducted with the gate electrodes 310 and 311 as an anode in theelectrolyte, to thereby form an anodic oxide film 312. The anodic oxidefilm is to restrain the pierced product caused by the abnormal growth ofaluminum in a poststage. Then, that anodic oxide film is formed in orderto restrain the occurrence of crosstalk or short-circuiting betweenupper and lower electrodes, adjacent electrodes, or wirings. Thethickness of the anodic oxide film 312 may be selected in the range ofabout 100 to 800 Å. In the above-mentioned manner, a state shown in FIG.6B is obtained.

Thereafter, the region of one thin-film transistor is covered with aresist mask 313. In FIG. 6C, there is shown a state in which the regionof the p-channel thin-film transistor is covered with the resist mask313. In this state, P (phosphorus) ions are implanted into the surfacethrough the plasma doping technique or the ion implantation technique.In this situation, P ions are not implanted in the region which iscovered with the resist mask 313. As a result, P ions are implanted intoregions 314 and 316. Also, P ions are not implanted in a region 315 withthe gate electrode 310 that functions as a mask.

In the above way, the source region 314 and the drain region 316 areformed in the self-alignment manner. Also, the channel formation region315 is formed (FIG. 6C).

Subsequently, the resist mask 313 is removed from the surface, and thethin-film transistor into which P ions have been implanted in theprevious process is covered with a resist mask (not shown). Then, in theprocess shown in FIG. 6C, B (boron) ions are implanted on the regionwhich had been in covered with the resist mask 313 (this process is notshown).

In this way, the source and drain regions of the right-sided p-channelthin-film transistor are formed. In other words, as shown in FIG. 6D, asource region 319, a drain region 317 and a channel formation region 318of the p-channel thin-film transistor are formed in the above-mentionedmanner.

After the implantation of P and B impurity ions has been finished, theactivation of the implanted impurity ions and the annealing of damagesof the surface due to the impulse of ions are conducted by theirradiation of a laser beam.

Subsequently, a silicon oxide layer 320 is formed as an interlayerinsulating film through the plasma CVD technique. The silicon oxide filmas formed may have a thickness of 6000 Å. Thereafter, contact holes areformed, and electrodes 321 and 322 which are in contact with the sourceregion and an electrode 323 which is common to the drain regions of boththe thin-film transistors are formed by a laminate film comprised of atitanium film and an aluminum film.

In this way, a circuit element of the CMOS structure in which theleft-sided n-channel thin-film transistor and the right-sided p-channelthin-film transistor are complementary to each other. In FIG. 6D, aninput electrode of the CMOS circuit is an electrode (not shown) which iscommonly connected to gate electrodes 310 and 311, and an outputelectrode thereof is an electrode 123.

The CMOS circuit shown in this embodiment is constituted by amonocrystal-like regions or substantially monocrystal-like regions 307and 308 in FIG. 6A in which the directions of the same crystal axes aresubstantially identical to each other, and angles with the crystal axesas a center are substantially identical to each other.

Also, this embodiment shows an example in which the entire active layers307 and 308 forming a thin film transistor in FIG. 6A are constituted bya monocrystal-like region or substantially monocrystal-like region.

However, if the lowered characteristic of the thin-film transistor ispermitted, the channel formation region of the thin-film transistor maybe comprised of at least a monocrystal-like region or substantiallymonocrystal region. In other words, grain boundaries may exist in partsof the source or drain region.

Also, this embodiment shows an example in which a thin-film transistorcircuit having a pair of CMOS structures is constituted by one crystalseed. However, a large number of like circuits are actually disposed inother regions.

In this case, the respective circuits are comprised of monocrystal-likeregions or substantially monocrystal-like regions which have been formedon the basis of different crystal seeds, respectively. Since therespective crystal seeds are generally formed from different crystalgrains (it is needless to say that there is a case in which they areformed from the same crystal grains), it is found that the crystal seedshave different crystal axes (there is a case where they happen to haveidentical crystal axes).

Accordingly, assuming that a thin-film transistor circuit having a pairof CMOS structures is one group, although the crystal axes of the activelayers (semiconductor regions) are identical (substantially identical)to each other within the groups, the rotating angles with the crystalaxes as a center are different from each other.

Eleventh Embodiment

An eleventh embodiment relates to one structure of a substrate thatforms an active matrix liquid-crystal display unit. Speaking in moredetail, this embodiment shows an example of manufacturing one of a pairof glass substrates that constitute a liquid-crystal panel (liquidcrystal is held between the paired glass substrates).

FIG. 7 shows a process of manufacturing an active matrix liquid-crystaldisplay unit. First, a silicon oxide film 402 that functions as an underlayer and has a thickness of 3000 Å is formed on a glass substrate 401through the sputtering technique or the plasma CVD technique. Then, anamorphous silicon film having a thickness of 3000 Å is formed on thesilicon oxide film 402 through the plasma CVD technique or thedecompression thermal CVD technique.

Subsequently, using the device shown in FIG. 1, a plasma processing dueto hydrogen plasma or helium plasma is conducted. In other words, asubstrate is disposed on a substrate holder 106 of the device shown inFIG. 1, and a hydrogen plasma processing is conducted on the amorphoussilicon film.

Further, a heat treatment at 550° C. for 6 hours is conducted in thenitrogen atmosphere, to thereby crystallize the silicon film which hasbeen subjected to the plasma processing. Then, a portion 403 that willcome into a seed (which is also called “crystal growth nucleus”) ofcrystal growth later is formed by patterning the silicon film. In thisway, a state shown in FIG. 7A is obtained.

In this example, after the plasma processing for dehydrogenation hasbeen conducted, crystallization is conducted and patterning for forminga crystal seed is conducted. However, as another example, there may beapplied a method in which patterning is conducted after the plasmaprocessing has been conducted, and then heating is conducted forcrystallization.

It should be noted that a metal element that promotes thecrystallization of silicon may be added to the amorphous silicon filmbefore the crystallizing process due to heating. For example, a nickelacetate solution is coated on the silicon film through the spin coatingtechnique so that nickel elements are held in contact with the siliconfilm. It should be noted that this process may be conducted before theplasma processing. However, in this case, attention must be paid to afact that nickel elements are scattered during the plasma processing.

Also, there may be applied a method in which a plasma processing isconducted after patterning, and heating is then conducted forcrystallization. When this method is applied, since the plasmaprocessing and the crystallization processing are conducted after aregion which is capable of coming into a fine seed crystal has beenformed, a seed crystal can be more readily formed. In this case, nickelelements are added to the silicon film before patterning the siliconfilm.

After a state shown in FIG. 7A has been obtained, the amorphous siliconfilm 405 is formed on the entire surface of the silicon oxide film 402in such a manner that it covers a seed 403 of crystal growth. Theamorphous silicon film is used to form the active layer of a thin-filmtransistor later. The formation of this amorphous silicon film may bemade through the plasma CVD technique or the decompression thermal CVDtechnique. Also, the thickness of the amorphous silicon film is set to500 Å. In this manner, a state shown in FIG. 7B is obtained.

Then, a dehydrogenation processing due to hydrogen plasma is conductedusing the device shown in FIG. 1. Furthermore, a heat treatment at atemperature of 550° C. for 6 hours is conducted to make crystal growthprogress from the crystal seed 403 of the amorphous silicon film 405 sothat a monocrystal-like region or substantially monocrystal-like regioncan be formed in the periphery of that crystal growth.

Subsequently, a patterning is conducted to form regions 406, 407 and 408that will come into the active layers of the thin-film transistor. Theregions 406 and 407 that will come into the active layers constitute ap-channel thin-film transistor and an n-channel thin-film transistorwhich are disposed in a peripheral drive circuit region. Also, a region408 constitutes an n-channel thin-film transistor disposed in a pixelregion.

The active layers 406 and 407 are comprised of monocrystal-like regionsor substantially monocrystal-like regions. With such a structure, theperipheral drive circuit can be comprised of a thin-film transistorwhich consists of the monocrystal-like region or substantiallymonocrystal-like region. Also, in the active layers 406 and 407, thecrystal axes in a direction perpendicular to those surfaces have thesubstantially identical direction, and the rotating angles about theircrystal axes are also substantially identical to each other. This isbecause they are formed within a single crystal grain (monodomain) thathas grown from the same crystal seed 403.

Then, a silicon oxide film 409 that functions as a gate insulating filmand has a thickness of 1000 Å is formed on the surface through theplasma CVD technique. Thereafter, a film that mainly contains aluminumfor constituting a gate electrode and has a thickness of 5000 Å isformed on the silicon oxide film 409 through the sputtering technique orthe electron beam vapor deposition technique. Then, gate electrodes 410,411 and 412 is formed by patterning the film.

Furthermore, anodic oxidation is conducted with the respective gateelectrodes as an anode in the electrolyte, to thereby form anodic oxidelayers 413, 414 and 415. The anodic oxide layers are thinned to thethickness of about 500 to 1000 Å. This is made for preventingshort-circuiting between the adjacent electrodes or short-circuitingbetween the upper and lower, which is caused by the abnormal growth ofaluminum, and such a thin anodic oxide layer does not lead to anyproblem.

The thickness of the anodic oxide film 415 is set to about 2000 Å. Thisis because the anodic oxide film 415 is made to function as a mask toform an offset gate region in a process of implanting impurity ionswhich will be made later, in addition of the above-mentioned reason.

In this way, a state shown in FIG. 7C is obtained. In this state, theimplantation of impurity ions is conducted to form source and drainregions. In this example, a resist mask (not shown) is first formed soas to cover the upper regions of the active layers 407 and 408. Then, B(boron) ions which are impurities for giving the p-type are acceleratedand implanted into the surface through the ion implantation technique orthe plasma doping technique. Through this process, the gate electrode410 serves as a mask, and B ions are implanted in the regions that willcome into the source and drain regions of the active layer 406 in aself-alignment manner.

Thereafter, the resist mask that covers the active layers 407 and 408 isremoved from the surface to form a resist mask (not shown) that coversthe active layer 406. Then, P (phosphorus) ions are implanted into thesurface. In this way, the source and drain regions are formed in theactive layers 407 and 408. In this situation, an offset gate region isformed between the channel formation region and the source/drain regionin the active layer 408. This is because anodic oxide films on the sidesurfaces of the gate electrode 412 serve as a mask when implantingimpurity ions.

After the implantation of impurity ions has been finished, theirradiation of a laser beam or an intense light beam is conducted toperform the annealing of damages of the surface caused by theimplantation of ions and the activation of the implanted ions.

Subsequently, a silicon oxide film 416 having a thickness of 7000 Å isformed as an interlayer insulating film through the plasma CVDtechnique. Then, an ITO electrode 417 forming a pixel electrode isformed on the film.

After contact holes have been formed, a film which is a three-layer filmconsisting of a titanium film, an aluminum film and a titanium film isformed on the surface, and source electrodes 418 and 420 and a drainelectrode 419 which is common to two TFTs are formed by patterning thatfilm.

In this way, there is formed a CMOS circuit in which the p-channel typeand the n-channel type are complementary to each other with a PTFT(p-channel thin-film transistor) and an NTFT (n-channel thin-filmtransistor). Simultaneously, a source electrode 421 and a drainelectrode 422 of the rightmost-sided NTFT are formed. The drainelectrode 422 and the pixel electrode 417 of the pixel thin-filmtransistor is connected to each other. It should be noted that therightmost-sided NTFT is arranged in each of a large number of pixelelectrodes disposed in the form of a matrix although only onerightmost-side NTFT is shown.

In this way, a state shown in FIG. 7D is obtained. For constituting aliquid-crystal panel, an interlayer insulating film is further formed ofa silicon oxide film or the like, and an oriented film made of a resinmaterial (for example, polyimide) for orienting liquid crystal is formedon the interlayer insulating film. Also, an opposing electrode and anoriented film are formed on a glass substrate that forms the othersubstrate. Then, those two glass substrates are bonded together througha spacer or a seal layer, and a gap therebetween is filled with liquidcrystal. In this manner, an active matrix liquid-crystal display panelis formed.

In the structure shown in this embodiment, since a thin-film transistorthat forms a CMOS circuit of the peripheral drive circuit is constitutedby a monocrystal-like region or substantially monocrystal-like region,such a peripheral drive circuit as to deal with an image signal having aband of several tens MHz can be formed.

The active layer of the thin-film transistor disposed in the pixelregion remains in the amorphous state, and the amorphous silicon thinfilm is used in the pixel thin-film transistor. However, since the pixelregion does not require so high-speed operation, there arisesparticularly no problem when a normal image is displayed.

Twelfth Embodiment

A twelfth embodiment is characterized in that a portion that will form aseed of crystal growth is crystallized by the application of an energyafter patterning has been conducted in a process of forming a seed forcrystal growth in a process shown in FIG. 5.

This embodiment will be described hereinafter with reference to FIG. 5.The description of the processes or reference marks shown in FIG. 5 isidentical to that in the ninth embodiment, so far as there is no specialnotice. First, as shown in FIG. 5A, an under film 302 is formed on aglass substrate 301, and an amorphous silicon film 303 is formed on thatunder film 302. Then, a seed 304 for the crystal growth of an amorphousstate a region 204 is formed by patterning the amorphous silicon film303. This seed may be set to 1 to 20 μm square (FIG. 5B).

In this state, a dehydrogenation process is conducted. In this example,a hydrogen plasma processing is conducted on the seed 304 for thecrystal growth of an amorphous state, using the device shown in FIG. 1,so as to eliminate hydrogen from the interior of the seed 304.

It should be noted that metal elements are held in contact with asilicon film after a hydrogen plasma processing has been conducted. Inthis process, for example, in the case where nickel is used as the metalelements, nickel acetate may be coated on the silicon film through thespin coating technique.

Subsequently, a heat treatment, the irradiation of a laser beam or theirradiation of a laser beam while heating is conducted to crystallizethe seed 304 for crystal growth. In this situation, since the seed 304is a fine region, the seed 304 can be readily changed into amonocrystal-like region or substantially monocrystal-like region. Theprocesses shown in FIG. 5C and the following drawing are identical tothose shown in the ninth embodiment.

When applying the process shown in this embodiment, since a heattreatment is conducted after a region that will come into a seed crystalhas been patterned, a seed crystal portion can surely come into themonocrystal-like region or substantially monocrystal-like region.

In other words, in the case where patterning is conducted after thecrystallization described in the ninth embodiment has been conducted toform a seed crystal, it is impossible to remove the possibility that agrain boundary exists in the interior of the seed crystal. However, inthe case where crystallization is conducted after a region that willcome into a crystal seed has been formed by patterning, since thecrystal seed is of a fine region, it can surely have a monocrystal-likestructure or a substantially monocrystal-like structure.

Thirteenth Embodiment

A thirteenth embodiment is characterized in that a dehydrogenationprocess is conducted after an amorphous silicon film 303 has beenformed, patterning is conducted, and crystallization is conducted byapplying an energy in the process shown in FIG. 5, to thereby form aseed of crystal growth. The dehydrogenation process and other processesmay be conducted in accordance with the same conditions and structuresas those in the above-mentioned ninth to thirteenth embodiments.

Similarly, this embodiment can obtain the availability that seed crystalcan surely have the monocrystal-like structure or substantiallymonocrystal-like structure.

Fourteenth Embodiment

The above-mentioned embodiments 9 to 13 mainly show examples in case ofconducting heating as a method of giving an energy for crystallization.However, as a crystallizing manner which is more effective than theheating, there is an example of methods of conducting the irradiation ofa laser beam while heating. For a laser beam, it is preferable to use apulse oscillation laser having a wavelength of an ultraviolet region orless. For example, the KrF excimer laser or the XeCl excimer laser maybe preferably used.

Also, in irradiating a laser beam, it is important to heat a sample(substrate) or a surface to be irradiated to a temperature of from 400°C. to a strain point of a glass substrate, or to a temperature of from400° C. to the crystallization temperature of an amorphous silicon film.This temperature is preferably set as high as possible. The heating isvery effective in restraining a rapid change in a phase in accordancewith the irradiation of a laser beam and in preventing a grain boundaryor defects from being produced.

It should be noted that although the crystallization temperature of theamorphous silicon film depends on the film forming method and the filmthickness, it is about 600 to 650° C.

Fifteenth Embodiment

A fifteenth embodiment shows an example in which a thin-film transistoris formed using a monocrystal-like region or a substantiallymonocrystal-like region which has been obtained through the processshown in FIG. 5. More specifically speaking, this embodiment shows anexample of patterning the monocrystal-like region or a substantiallymonocrystal-like region.

What is shown in FIG. 10A is an example of patterning in case of formingone thin-film transistor using a monocrystal-like region or asubstantially monocrystal-like region. In the patterning shown in FIG.10A, a monocrystal-like region or a substantially monocrystal-likeregion is patterned in a pattern 701, to thereby form the active layerof a thin-film transistor. In other words, in this case, the activelayer of the thin-film transistor has the pattern 701.

Also, in FIG. 10A, reference numeral 702 denotes a gate electrode. Theregion of the active layer 701 that crosses the gate electrode comesinto a channel formation region.

What is shown in FIG. 10B is an example in which two gate electrodes aredisposed on the active layer 701. In such a case, different signals orpotentials are given to these two gate electrodes so that the entiredevice can function as one element.

Sixteenth Embodiment

A sixteenth embodiment relates to the shape of patterning of a seedcrystal. For example, the above-mentioned ninth embodiment shows anexample in which a seed for crystal growth has a size of 1 to 20 μmsquare. However, the shape of the seed for crystal growth is not limitedto a square. This embodiment shows an example in which a crystal seed ispatterned in a rectangular form.

FIG. 11A shows a first example. The structure shown in FIG. 11A shows astate in which a crystal seed 801 is formed in a rectangular form, andcrystal growth is made from that crystal seed 801. In FIG. 11A,reference numeral 802 denotes a monocrystal-like region or asubstantially monocrystal-like region. Then, regions 803 and 804 aremade to remain by patterning, thereby being capable of forming anisland-like region which is formed of a monocrystal-like region or asubstantially monocrystal-like region. Then, a thin-film transistor orother thin-film semiconductor devices having that region as an-activelayer can be formed.

A pair of thin-film transistors can be constituted by positioning asshown in FIG. 11A. For example, a CMOS structure or an invertor circuitthat consists of the combination of the p-channel type and the n-channeltype can be constituted.

FIG. 11B shows a second example. In the example shown in FIG. 11B, aregion 802 can be changed into a monocrystal-like region or asubstantially monocrystal-like region by crystal growth from arectangular crystal seed region 801. Then, regions 805 to 808 are madeto remain by patterning, thereby being capable of forming a plurality ofmonocrystal-like regions or substantially monocrystal-like regions.

The thin-film integrated circuit consisting of a large number ofthin-film transistors can be formed by a region having the same crystalaxes and rotating angles therearound by positioning as shown in FIG.11B.

Seventeenth Embodiment

FIG. 12 shows a device in accordance with a seventeenth embodiment. Thedevice shown in FIG. 12 has a structure in which a plasma processingchamber, a heating chamber and a laser beam irradiating chamber aredisposed independently with a substrate transporting chamber as acenter. Using the device shown in FIG. 12, the plasma processing,heating and the irradiation of a laser beam can be continuouslyconducted in the circumstances with no contamination.

The device shown in FIG. 12 includes a substrate take-in and take-outchamber 901 for taking a substrate in the device and taking out thesubstrate from the device, a plasma processing chamber 902 forconducting a plasma processing on the amorphous silicon film formed onthe substrate, a heating chamber 903 for heating the silicon film formedon the J substrate, a laser irradiating chamber 904 for irradiating alaser beam onto the silicon film formed on the substrate, and asubstrate transporting chamber 905 having means for transporting thesubstrate between the respective chambers.

FIG. 13 shows a section taken along a line A-A′ in FIG. 12. FIG. 14shows a section taken along a line B-B′ in FIG. 12. The respectivechambers have a structure with an airtightness, and as occasions demand,they can come into a high vacuum state. Also, the respective chambersare connected to each other through the substrate transporting chamber905 which is a common chamber and gate valves 906, 907, 908 and 909. Thegate valves are structured so as to provide a sufficient airtightness.

Then, the respective chambers will be described in more detail.Reference numeral 901 denotes a substrate take-in and take-out chamberfor conducting the take-in and take-out of the substrate with respect tothe device. As shown in FIG. 14, each cassette 911 is taken in thechamber 901 from the external of the device through a door 914 in astate where a large number of substrates 911 are received in thecassette 910. Also, after the processing has been finished, thesubstrates in each cassette 910 are taken out to the exterior of thedevice from the door 914.

The door take-in and take-out chamber 901 is equipped with a gasintroducing system 912 for purge such as an inactive gas and an exhaustpump 913 for exhausting an unnecessary gas and for making an in-roompressure in a reduced pressure state or in a high vacuum state.

Reference numeral 902 in FIGS. 12 and 13 denotes a plasma processingchamber. In this chamber, a plasma processing is conducted on theamorphous silicon film formed on the glass substrate by hydrogen plasmaor helium plasma which is generated under the ECR condition.

The plasma processing chamber 902 is equipped with a coil 918 and amicrowave oscillator 916 which generate a magnetic field, and awaveguide 917 for guiding microwaves in the processing chamber so as torealize the ECR condition for generating plasma.

The ECR is realized when 2πf=eB/m is satisfied where f is a frequency ofmicrowaves, B is a magnetic flux density, m is an electron mass, and eis an electron charge. In the plasma processing chamber 902, the ECRcondition is realized by setting the frequency f of microwaves, themagnetic flux density B of a magnetic field in the coil to values thatsatisfy the above-mentioned conditional expression.

In the structure shown in this embodiment, the position of a substratestage 915 is adjusted so as to realize the ECR condition just at aposition where the substrate is located. In other words, the substrateis disposed at a position where the magnetic flux density satisfies theabove-mentioned ECR condition.

In a region where the ECR condition is satisfied, plasma is heated at ahigh temperature. Then, the substrate is also heated. This is to furtherpromote the order of a crystal structure in the film.

Also, the plasma processing chamber 902 is provided with a gasintroducing system 916 and a gas exhaust system having an exhaust pump917. Hydrogen gas or helium gas is introduced from a gas introducingsystem 912, and a required decompression state can be realized by theair exhaust pump 917.

A chamber 903 shown in FIGS. 12 and 14 is a chamber (heating chamber)for heating a substrate on which a silicon film is formed. Thesubstrates 911 are received on a stage 918 by which a large number ofsubstrates 911 go up and down. The substrates received on the stage 918is heated by a heating heater 921 in the heating chamber 903.

Similarly, the heating chamber 903 is equipped with an inactive gasintroducing system 919 for purge and an air exhaust pump 920 which iscapable of making a pressure within the heating chamber in a high vacuumstate.

Reference numeral 904 denotes a chamber (a laser processing chamber) forirradiating a laser beam onto the silicon film formed on the substrate.A laser beam is oscillated by an oscillator 922 and allowed to passthrough an optical system (not shown) so as to be formed into a requiredbeam. In this example, the laser beam is formed into a linear beamhaving a width of several mm to several cm and a length of several tenscm.

The beam is then allowed to pass through a window 924 which is made ofquartz by a mirror or the like, and the laser beam is irradiated ontothe silicon film formed on the substrate which is disposed on a stage925 within the laser processing chamber 904.

The stage 925 includes a heater for heating the substrate therein and iscapable of heating the substrate. Also, the stage 925 is movable in onedirection, and a linear beam is irradiated onto the substrate while thesubstrate is scanned by the beam. A laser beam can be irradiated ontothe entire substrate by irradiating a linear laser beam thereon whilemoving the stage 925.

Also, the stage 925 can be rotated in such a manner that the scanningdirection of a laser beam is so changed as to irradiate the laser beam.Doing so, the uniformity of the effect due to the irradiation of a laserbeam can be enhanced.

Similarly, in the laser processing chamber 904, there are disposed aninactive gas introducing system 919 for purge and an air exhausting pump920 for realizing the exhaust of an unnecessary gas and a high vacuumstate.

A substrate transporting chamber 905 is a chamber having a function oftransporting (conveying) the substrate 911 by a robot arm 922.Similarly, in this chamber, there are disposed an inactive gasintroducing system 923 for purge and an air exhausting pump 924 formaking the interior of the chamber in a high vacuum state. Also, therobot arm 922 includes a heater therein so that the transportedsubstrate is not changed in temperature.

Hereinafter, a description will be given of a process of conducting aplasma processing on the amorphous silicon film formed on the glasssubstrate, irradiating a laser beam onto the silicon film in a heatedstate to crystallize the amorphous silicon film into a crystallinesilicon film.

First, in an initial stage, the respective gate valves are in a closedstate. The transporting chamber 905, the laser processing chamber 904,the heating chamber 903 and the plasma processing chamber 902 are heldin a high vacuum state.

In this state, a large number of glass substrates are first received ina cassette 910 shown in FIG. 14 (in this state, the cassette is outsideof the device). A silicon oxide film having a thickness of 3000 Å isformed on the glass substrate as an under film, and an amorphous siliconfilm having a thickness of 500 Å is further formed thereon.

The door 914 of the take-in/take-out chamber 901 is opened, and thecassette 910 in which the glass substrates are received is taken in thetake-in/take-out chamber 901. Then, the door 914 (shown in FIG. 14) isclosed. After the door 914 has been closed, the take-in/take-out chamber914 is filled with a nitrogen gas before being made in a high vacuumstate. In this state, all the chambers are made in a high vacuum state.The interior of the heating chamber 903 has been heated at a temperatureof 550° C.

Subsequently, the gate valves 906 and 907 are opened. Then, onesubstrate is drawn out from the cassette 910 within the take-in/take-outchamber 901 by the robot arm 922. The substrate is transported withinthe plasma processing chamber 902. Thereafter, the gate valves 906 and907 are closed.

Subsequently, in the plasma processing chamber 902, a hydrogen gas isintroduced from the gas introducing system 916, and hydrogen plasmausing the ECR condition is generated in a predetermined decompressionstate before a plasma processing is conducted on the amorphous siliconfilm formed on the glass substrate.

Hydrogen is eliminated in the amorphous silicon film through the plasmaprocessing, and binding between silicon atoms is increased so that thestate is changed into a more order state. This state is a state wherethe amorphous silicon is liable of being very crystallized, that is, atransitional state which is also called a quasi-crystalline state.

The transitional state is a very unstable state. Accordingly, when beingbrought in contact with air, compound of oxygen, nitrogen and carboncomponents contained in air, etc., are formed on the surface of thesilicon film and in the interior thereof. This leads to the remarkabledeterioration of a film quality.

In view of the above, after the plasma processing has been finished inthe plasma processing chamber 902, the plasma processing chamber is madein a high vacuum state. Then, the gate valves 907 and 908 are opened. Inthis state, the transporting chamber 905 and the heating chamber 903 areheld in a high vacuum state.

Thereafter, the substrate is drawn out from the plasma processingchamber by the robot hand 922 and transported to the heating chamber903. Then, the gate valves 907 and 908 are closed.

The above-mentioned operation is repeatedly conducted to thereby receivea predetermined number of substrates (this number is made to coincidewith the number of substrates which are initially received in thecassette) in the heating chamber 903. The number of received substratesis determined in accordance with an elapse time since the firstsubstrate has been received in the heating chamber.

After the predetermined number of substrates have been received in theheating chamber 903, the gate valves 908 and 909 are opened. Then, thesubstrate is transported from the heating chamber 903 to the laserprocessing chamber 924 by the robot arm 922. It should be noted that, inthis situation, a portion of the robot arm 922 which is in contact withthe substrate is made in a state where it is held at a temperature of550° C. by heating due to the internal heater.

Subsequently, the gate valves 908 and 909 are closed. Then, the siliconfilm which has been subjected to the plasma processing is crystallizedby the irradiation of a laser beam. In this situation, the irradiationof a laser beam is conducted while the substrate is held at atemperature of 550° C. The irradiation of a laser beam is conductedwhile a linear beam is being moved in a direction perpendicular to thelongitudinal direction of the linear beam, whereby a laser beam isirradiated over the entire surface of the silicon film. Also, anatmosphere in which a laser beam is irradiated onto the surface is setin a high vacuum state.

After the irradiation of a laser beam has been finished, the gate valves909 and 906 are opened, and the substrate within the laser processingchamber 904 is transported to the take-in/take-out chamber 901 by therobot arm 922. Then, the gate valve 906 is closed, and the gate valve908 is opened. Thereafter, the substrate received in the heating chamber903 is taken out by the robot arm 922 and transported to the laserprocessing chamber 904. Thereafter, the gate valves 908 and 909 areclosed. The irradiation of a laser beam is again conducted.

In this way, the substrates received in the heating chamber 903 areprocessed one by one, and the substrates which have been processed aresequentially received in the cassette 910 within the take-in/take-outchamber 901. After a sequence of processes have been finished, theinterior of the take-in/take-out chamber 901 is made in an atmospherestate using an inactive gas under a state where the gate valve 906 isclosed. Then, the door 914 is opened, and the cassette 910 is taken outto the exterior of the device. Thus, the processing has been finished.

In the structure shown in this embodiment, the silicon film which hasbeen subjected to the plasma processing is transported to the heatingchamber 903 with being out of contact with an atmosphere or contaminatedgas, and then transported from the heating chamber 903 to the laserprocessing chamber 904 with being out of contact with an atmosphere orcontaminated gas. Hence, the silicon film which has been subjected tothe plasma processing is not contaminated.

The silicon film which has been subjected to the plasma processing isliable to be largely influenced by contamination. The influence ofcontamination is liable to largely appearing in the crystalline propertyof the crystalline silicon film obtained and the reproducibilitythereof. Hence, the above-mentioned structure is very effective means inensuring the crystalline property of the crystalline silicon filmobtained.

Eighteenth Embodiment

An eighteenth embodiment relates to a device for conducting a plasmaprocessing on an amorphous silicon film which is formed on a substrateand for conducting crystallization by heating the silicon film which hasbeen subjected to the plasma processing. FIG. 15 shows a device inaccordance with this embodiment.

The device shown in FIG. 15 is characterized in that 1) a step offorming a silicon oxide film on a substrate as an under film, 2) a stepof forming an amorphous silicon film on the under film, 3) a step ofconducting a plasma processing on the amorphous silicon film, and 4) astep of conducting a heat treatment to crystallize the amorphous siliconfilm are continuously conducted in an atmosphere where there is nocontamination.

The device shown in FIG. 15 includes a substrate take-in/take-outchamber 1001, a parallel plane type plasma CVD device 1002 (film formingchamber) for forming an under silicon oxide film on a substrate, aparallel plane type plasma CVD device 1003 (film forming chamber) forforming an amorphous silicon film, a plasma processing device 1004(plasma processing chamber) for conducting a plasma processing on theamorphous silicon film using an ECR plasma, heating chambers 1005 and1006 for conducting a heat treatment on the silicon film which has beensubjected to the plasma processing, a transporting chamber 1007 having arobot arm 1014 for conducting the transportation of the substratebetween the respective chambers, and gate valves 1008, 1009, 1010, 1011,1012 and 1013 for binding each chamber to the transporting chamber 1007commonly connected to each chamber. Although being not shown, eachchamber is equipped with a gas supply system for supplying a requiredgas, a gas exhaust system for realizing a required decompression stateor a high vacuum state, and means for heating the substrate (except forthe take-in/take-out chamber). Also, the plasma processing chamber hasthe same structure as that indicated by reference numeral 902 in FIG.13. Also, the heating chamber is so designed as to receive a largenumber of substrates therein.

Hereinafter, an example in which the device shown in FIG. 15 isoperated. First, all the chambers are made in a high vacuum state exceptfor the take-in/take-out chamber. It is important that all the chambershave the same internal pressure in this high vacuum state. Also, all thegate valves are made in the closed state.

First, the door 1000 is opened so that a cassette (not shown) thatreceives a large number of glass substrates therein is received withinthe substrate take-in/take-out chamber 1001. Then, the door 1000 isclosed so that the interior of the take-in/take-out chamber is filledwith an inactive gas. Thereafter, the inactive gas is exhausted from theinterior of the chamber into a high vacuum state.

Thereafter, the gate valves 1008 and 1009 are opened. One substrate istaken out by the robot arm and then transported to the film formingchamber 1002 for forming the silicon oxide film. Subsequently, the gatevalves 1008 and 1009 are closed. Then, in the film forming chamber 1002for forming a silicon oxide film, the silicon oxide film having athickness of 3000 Å is formed on the glass substrate. The silicon oxidefilm is formed in order to prevent impurities from being deposited fromthe glass substrate in the amorphous silicon film which will be formedlater. In the crystallization process which will be made later, thesilicon oxide film is formed so that a stress exerted on the glasssubstrate and the silicon film is relieved.

After the formation of the under film has been completed, the interiorof the film forming chamber 1002 is again made in a high vacuum state.Then, the gate valves 1009 and 1010 are opened. Thereafter, thesubstrate on the surface of which the silicon oxide film is formed istransported from the film forming chamber 1002 for forming the siliconoxide film to the film forming chamber 1003 for forming the amorphoussilicon film.

Then, the gate valve 1009 is closed. In this situation, the gate valve1009 remains opened. In the film forming chamber 1003 for forming theamorphous silicon film using a required gas, the amorphous silicon filmhaving a thickness of 500 Å is formed. The amorphous silicon film isformed on the silicon oxide film which is formed on the glass substrate.

During the formation of the amorphous silicon film in theabove-mentioned film forming chamber 1003, the gate valve 1008 isopened. One glass substrate is taken out from the cassette within thetake-in/take-out chamber 1001 by the robot arm 1014 and then transportedto the film forming chamber 1002 for a silicon oxide film. Subsequently,the gate valves 1008 and 1009 are closed. Then, the silicon oxide filmis formed. That is, the amorphous silicon film is formed on the glasssubstrate in the film forming chamber 1002 while the amorphous siliconfilm is being formed in the film forming chamber 1003.

In this state, the formation of the amorphous silicon film in the filmforming chamber 1003 and the formation of the amorphous silicon film inthe film forming chamber 102 progress simultaneously.

After the formation of the amorphous silicon film in the film formingchamber 1003 and the formation of the silicon oxide film in the filmforming chamber 1002 have been finished, the interior within the twofilm forming chambers is made in a high vacuum state. Then, the gatevalves 1010 and 1011 are opened. In this situation, a period requiredfor the formation of the amorphous silicon film in the film formingchamber 1003 is not always the same as that required for the formationof the amorphous silicon film in the film forming chamber 1002. In thiscase, the other film forming chamber is in a standby state until onefilm formation has been finished.

After the gate valves 1010 and 1011 are closed, the substrate istransported to the film forming chamber 1003 for forming the amorphoussilicon film by the robot hand, and the film forming chamber 1003 ismade in a high vacuum state. Subsequently, the gate valves 1010 and 1011are opened. Then, the glass substrate on which the amorphous siliconfilm is formed is transported from the film forming chamber 1003 to theplasma processing chamber 1004 for conducting the plasma processing bythe robot arm 1014.

Then, the gate valve 1011 is closed. Subsequently, a processing due tohydrogen plasma is conducted in the plasma processing chamber 1004.During the plasma processing, the gate valve 1009 is opened, and theglass substrate on which the silicon oxide film has been formed is drawnfrom the film forming chamber 1002 for forming the silicon oxide filmand transported to the film forming chamber 1003 for forming theamorphous silicon film. Then, the gate valve 1010 is closed. Thereafter,the formation of the amorphous silicon film is conducted in the filmforming chamber 1003.

After the formation of the amorphous silicon film in the film formingchamber 1003 is started, the gate valve 1008 is opened, and the glasssubstrate received in the cassette within the take-in/take-out chamber1001 is drawn out by the robot arm 1014 and then transported to the filmforming chamber 1002 for the silicon oxide film. Then, the gate valves1008 and 1009 are closed.

After the plasma processing has been finished in the plasma processingchamber 1004, the plasma processing chamber is made in a high vacuumstate. Thereafter, the gate valves 1011 and 1012 are opened. In thissituation, the heating chamber has been heated to a temperature of 550°C. in advance. Then, the glass substrate which has been subjected to theplasma processing is taken out by the robot arm 1014. The drawn-outglass substrate is transported to the heating chamber 1005 by the robotarm. Then, the gate valve 1012 is closed.

Subsequently, the gate valve 1010 is opened, and the glass substrate onwhich the amorphous silicon film is formed is drawn out by the robot armand transported to the plasma processing chamber. Then, the gate valve1011 is closed. Thereafter, the gate valve 1009 is opened, and the glasssubstrate on which the silicon oxide film is formed is drawn out fromthe film forming chamber 1002 for forming the silicon oxide film by therobot arm and transported to the film forming chamber 1003 for formingthe amorphous silicon film. Then, the gate valve 1010 is closed. Thegate valve 1008 is opened, and the glass substrate is drawn out from thetake-in/take-out chamber 1001 and transported to the film formingchamber 1002 for forming the silicon oxide film by the robot arm.

The above-mentioned operation is repeatedly conducted with the resultthat the glass substrates on which the plasma-processed silicon filmsare formed are received in the heating chamber 1005 one by one. When theheating chamber 1005 becomes full of the substrates, the substrates arereceived in the heating chamber 1006.

Subsequently, when four hours has elapsed since the first glasssubstrate is received in the heating chamber 1005, the first glasssubstrate is drawn out from the heating chamber by the robot arm andtransported to a cassette within the take-in/take-out chamber 1001.

Next, when four hours has elapsed since the second glass substrate isreceived in the heating chamber 1005, the second glass substrate isdrawn out from the heating chamber by the robot arm and transported to acassette within the take-in/take-out chamber 1001.

In this way, the substrates received in the heating chamber for 4 hoursis received in the cassette within the take-in/take-out chamber one byone, whereby the glass substrates which have been conducted on the heattreatment for 4 hours are received in the cassette. Similarly, in thiscase, it is important that the transportation of a substrate isconducted in a high vacuum state.

In the above-mentioned manner, the glass substrates on which thecrystalline silicon films which have been crystallized by the heattreatment are formed are continuously obtained one by one. Finally, thedoor 1000 is opened while the interior of the take-in/take-out chamber1001 is made in an atmosphere. Then, the cassette is taken out to theexterior of the device with the result that the process using the deviceshown in FIG. 15 is completed.

In the process of this embodiment, it is important that a period whilethe glass substrate remains in the film forming chamber 1002 for formingthe silicon oxide film, a period while the glass substrate remains inthe film forming chamber 1003 for forming the amorphous silicon film,and a period while the substrate remains in the plasma processingchamber 1004 are made identical to or substantially identical to eachother. This is because the processes continuously flow by conducting theprocessings simultaneously and sequentially shifting the processings inthose chambers.

When the above-mentioned process is applied, since an uncertained factorthat adversely affects the crystallization of the amorphous silicon filmcan be removed, a crystalline silicon film having the uniformcrystalline property and electric characteristic can be obtained. Also,the above-mentioned process is conducted by computer control, therebybeing capable of continuously conducting the work. Then, a highproductivity can be obtained.

Nineteenth Embodiment

A nineteenth embodiment shows another structure of a plasma processingdevice (plasma processing chamber) indicated by reference numeral 902 inFIGS. 12 and 13 and reference numeral 1004 in FIG. 15. The device shownin this embodiment can be used instead of the device 102 in FIGS. 12 and13 and the plasma processing device (plasma processing chamber) 1004 inFIG. 15. The structure shown in this embodiment uses the structuredisclosed in Japanese Patent Unexamined Publication No. Hei 5-129235 andNo. Hei 6-310494.

FIG. 16 shows the outline of the plasma processing device in accordancewith this embodiment. The device shown in FIG. 16 is characterized inthat the ECR condition can be generated over a large area. In the deviceshown in FIG. 16, reference numeral 2001 denotes a decompression chamberhaving an airtightness that allows its interior to be in a requireddecompression state and also in a required high vacuum state.

Microwaves of 2.45 GHz are supplied to the interior of the decompressionchamber 2001 from an oscillator 2006 through a guidewave 2007. Referencenumeral 2002 denotes magnetic field generating means and gas introducingmeans that has a structure in which a large number of permanent magnets2003 and a gas are uniformly introduced over a large area as indicatedby reference numeral 2008.

As a gas for generating plasma supplied from the gas supply system 2012,hydrogen gas, helium gas or a gas that mainly contains at least one ofthose gases is selected.

The substrate which will be subjected to a plasma processing is disposedon the substrate stage 2005. A heater for heating the substrate isinstalled in the substrate stage 2005. Reference numeral 2009 denotes anair exhaust pump which can make the interior of the chamber 2001 in arequired decompression state or in a required high vacuum state.

Also, the substrate stage 2005 also serves as an electrode andstructured such that a high frequency or constant potential bias can besupplied to the substrate 2011 from the power supply 2013.

FIG. 17 shows an enlarged state of a portion at which a permanent magnet2002 of the magnetic field generating and gas introducing means 2005 isdisposed. The permanent magnet is disposed such that polarities arealternately disposed as indicated by reference numeral 3001.

FIG. 18 shows a state in which the magnetic field generating and gasintroducing means 2002 is viewed from the substrate stage 2005 side. Thepermanent magnets 2002 are disposed such that they are in a concentriccircle and such that their polarities are alternately disposed. Then, alarge number of hole 2004 for introducing a gas are disposed in such amanner that gas is uniformly blown out.

When the structure shown in FIGS. 17 and 18 are applied, a magneticfield density that satisfies the ECR condition is realized in a spaceregion 3003 by the line of magnetic force 3002. This space is realizedin the form of a ring just on a region where a hole 2004 for introducinga gas is formed in FIG. 18.

In other words, a space region of the magnetic flux density B thatsatisfies 2πf=eB/m exhibiting the ECR condition with respect to thefrequency f of an incident microwaves (μ wave) is of a space region3003. It should be noted that m is the mass of an electron, and e is thecharge of an electron. It is needless to say that the frequency ofmicrowaves and the intense of the permanent magnets are selected so thatthe above-mention expression is satisfied.

With such a structure, the ECR condition can be realized in the spaceregion 3002. Although this region is not formed over the entire largeregion, plasma generated under the ECR condition can be used over thelarge region. In other words, even though the substrate 2011 isincreased in area, the plasma processing can be conducted on the entireregion.

As was described above, in a method of manufacturing a semiconductordevice in accordance with the present invention, a processing due tohydrogen plasma or helium plasma is conducted on the amorphous siliconfilm so that the amorphous silicon film can be first changed into atransitional state where crystallization is liable to largely progress,which is called “a quasi-crystalline state”. Then, in this state, theheat treatment or the irradiation of a laser beam while heating isconducted, whereby a crystalline silicon film can be obtained with aheating temperature and a heating period which are withstood by theglass substrate.

Therefore, a crystalline silicon film can be obtained on a glasssubstrate or a substrate having other insulating surfaces at arelatively low temperature (this temperature means, for example, atemperature which is withstood by the glass substrate). In particular, amonocrystal-like region or a substantially monocrystal-like region canbe formed on the glass substrate, and a thin-film transistor can beformed using that region. Also, using that technique, an active matrixliquid-crystal display unit into which the peripheral drive circuits areintegrated can be obtained using a thin-film transistor.

Further, using a device for manufacturing the semiconductor device inaccordance with the present invention, a process for crystallizing theamorphous silicon film on a glass substrate or substrate having anotherinsulating surface can be conducted with a high reproducibility. Inparticular, the crystalline silicon film which is excellent in thecrystalline property can be conducted with a high reproducibility and ahigh productivity.

The foregoing description of a preferred embodiment of the invention hasbeen presented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and modifications and variations are possible in light of theabove teachings or may be acquired from practice of the invention. Theembodiment was chosen and described in order to explain the principlesof the invention and its practical application to enable one skilled inthe art to utilize the invention in various embodiments and with variousmodifications as are suited to the particular use contemplated. It isintended that the scope of the invention be defined by the claimsappended hereto, and their equivalents.

1. A method of manufacturing a semiconductor device comprising the stepsof: forming a semiconductor film comprising amorphous silicon on aninsulating surface; patterning said semiconductor film into at least onesemiconductor layer; treating said at least one semiconductor layer witha plasma after said patterning step; providing said at least onesemiconductor layer with a metal containing material for promoting acrystallization of said at least one semiconductor layer; crystallizingsaid at least one semiconductor layer by a heat treatment after saidproviding step and after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidtreating crystallizing step; implanting impurity ions into portions ofsaid at least one semiconductor layer after forming said gate insulatingfilm; and activating said impurity ions after said implanting step. 2.The method according to claim 1 wherein said activating step isconducted by irradiating said at least one semiconductor layer with alaser beam.
 3. A method of manufacturing a semiconductor devicecomprising the steps of: forming a semiconductor film comprisingamorphous silicon on an insulating surface; patterning saidsemiconductor film into at least one semiconductor layer; providing saidat least one semiconductor layer with a metal containing material forpromoting a crystallization of said at least one semiconductor layer;treating said at least one semiconductor layer with a plasma after saidproviding step; crystallizing said at least one semiconductor layer by aheat treatment after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidtreating crystallizing step; implanting impurity ions into portions ofsaid at least one semiconductor layer after forming said gate insulatingfilm; and activating said impurity ions after said implanting step. 4.The method according to claim 3 wherein said activating step isconducted by irradiating said at least one semiconductor layer with alaser beam.
 5. A method of manufacturing a semiconductor devicecomprising the steps of: forming a semiconductor film comprisingamorphous silicon on an insulating surface; patterning saidsemiconductor film into at least one semiconductor layer; treating saidat least one semiconductor layer with a plasma of hydrogen or heliumafter said patterning step; providing said at least one semiconductorlayer with a metal containing material for promoting a crystallizationof said at least one semiconductor layer; crystallizing said at leastone semiconductor layer by a heat treatment after said providing stepand after said plasma treating step; forming a gate insulating film onsaid at least one semiconductor layer after said crystallization step;implanting impurity ions into portions of said at least onesemiconductor layer after forming said gate insulating film; andactivating said impurity ions after said implanting step.
 6. The methodaccording to claim 5 wherein said activating step is conducted byirradiating said at least one semiconductor layer with a laser beam. 7.A method of manufacturing a semiconductor device comprising the stepsof: forming a semiconductor film comprising amorphous silicon on aninsulating surface; patterning said semiconductor film into at least onesemiconductor layer; providing said at least one semiconductor layerwith a metal containing material for promoting a crystallization of saidat least one semiconductor layer; treating said at least onesemiconductor layer with a plasma of hydrogen or helium after saidproviding step; crystallizing said at least one semiconductor layer by aheat treatment after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidcrystallizing step; implanting impurity ions into portions of said atleast one semiconductor layer after forming said gate insulating film;and activating said impurity ions after said implanting step.
 8. Themethod according to claim 7 wherein said activating step is conducted byirradiating said at least one semiconductor layer with a laser beam. 9.A method of manufacturing a semiconductor device comprising the stepsof: forming a semiconductor film comprising amorphous silicon on aninsulating surface; patterning said semiconductor film into at least onesemiconductor layer; treating said at least one semiconductor layer witha plasma in order to break bonds between silicon and hydrogen in said atleast one semiconductor layer; and providing said at least onesemiconductor layer with a metal containing material for promoting acrystallization of said at least one semiconductor layer; crystallizingsaid at least one semiconductor layer by a heat treatment after saidproviding step and after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidcrystallizing step; implanting impurity ions into portions of said atleast one semiconductor layer after forming gate insulating film; andactivating said impurity ions after said implanting step.
 10. The methodaccording to claim 9 wherein said activating step is conducted byirradiating said at least one semiconductor layer with a laser beam. 11.A method of manufacturing a semiconductor device comprising the stepsof: forming a semiconductor film comprising amorphous silicon on aninsulating surface; patterning said semiconductor film into at least onesemiconductor layer; providing said at least one semiconductor layerwith a metal containing material for promoting a crystallization of saidat least one semiconductor layer; treating said at least onesemiconductor layer with a plasma in order to break bonds betweensilicon and hydrogen in said at least one semiconductor layer after saidproviding step; crystallizing said at least one semiconductor layer by aheat treatment after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidcrystallizing step; implanting impurity ions into portions of said atleast one semiconductor layer after forming said gate insulating film;and activating said impurity ions after said implanting step.
 12. Themethod according to any one of claims 1, 3, 5, 7, 9 or 11 wherein saidmetal is at least one selected from the group consisting of Fe, Co, Ru,Rh, Pd, Os, Ir, Pt, Cu, Ag and Au.
 13. The method according to any oneof claims 1, 3, 5, 7, 9 or 11 wherein said semiconductor device is anactive matrix liquid crystal device.
 14. The method according to any oneof claims 1, 3, 5, 7, 9 or 11 wherein said metal is nickel.
 15. Themethod according to claim 11 wherein said activating step is conductedby irradiating said at least one semiconductor layer with a laser beam.16. A method of manufacturing a semiconductor device comprising thesteps of: forming a semiconductor film comprising amorphous silicon onan insulating surface; patterning said semiconductor film into at leastone semiconductor layer; treating said at least one semiconductor layerwith a plasma in order to dehydrogenate said at least one semiconductorlayer; crystallizing said at least one semiconductor layer by a heattreatment after said providing step and after said plasma treating step;forming a gate insulating film on said at least one semiconductor layerafter said crystallizing step; implanting impurity ions into portions ofsaid at least one semiconductor layer after forming said gate insulatingfilm; and activating said impurity ions after said implanting step. 17.The method according to claim 16 wherein said activating step isconducted by irradiating said at least one semiconductor layer with alaser beam.
 18. A method of manufacturing a semiconductor devicecomprising the steps of: forming a semiconductor film comprisingamorphous silicon on an insulating surface; patterning saidsemiconductor film into at least one semiconductor layer; providing saidat least one semiconductor layer with a metal containing material forpromoting a crystallization of said at least one semiconductor layer;treating said at least one semiconductor layer with a plasma in order todehydrogenate said at least one semiconductor layer after said providingstep; crystallizing said at least one semiconductor layer by a heattreatment after said plasma treating step; forming a gate insulatingfilm on said at least one semiconductor layer after said treatingcrystallizing step; implanting impurity ions into portions of said atleast one semiconductor layer after forming said gate insulating film;and activating said impurity ions after said implanting step.
 19. Themethod according to any one of claims 9, 11, 16, or 18 wherein saidplasma is a plasma of hydrogen gas.
 20. The method according to any oneof claims 9, 11, 16 or 18 wherein said plasma is a plasma of helium gas.21. The method according to claim 18 wherein said activating step isconducted by irradiating said at least one semiconductor layer with alaser beam.
 22. A method of manufacturing a semiconductor devicecomprising the steps of: forming a semiconductor film comprisingamorphous silicon on an insulating surface; patterning saidsemiconductor film into at least one semiconductor layer; treating saidat least one semiconductor layer with a plasma after said patterningstep; providing said at least one semiconductor layer with a metalcontaining material for promoting a crystallization of said at least onesemiconductor layer; crystallizing said at least one semiconductor layerby irradiating a light after said providing step and after said plasmatreating step; forming a gate insulating film on said at least onesemiconductor layer after said crystallizing step; implanting impurityions into portions of said at least one semiconductor layer afterforming said gate insulating film; and activating said impurity ionsafter said implanting step.
 23. The method according to claim 22 whereinsaid metal is at least one selected from the group consisting of Fe, Co,Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag and Au.
 24. The method according to claim22 wherein said semiconductor device is an active matrix liquid crystaldevice.
 25. The method according to claim 22 wherein said metal isnickel.
 26. The method according to claim 22 wherein said activatingstep is conducted by irradiating said at least one semiconductor layerwith a laser beam.
 27. A method of manufacturing a semiconductor devicecomprising the steps of: forming a semiconductor film comprisingamorphous silicon on an insulating surface; patterning saidsemiconductor film into at least one semiconductor layer; providing saidat least one semiconductor layer with a metal containing material forpromoting a crystallization of said at least one semiconductor layer;treating said at least one semiconductor layer with a plasma after saidproviding step; crystallizing said at least one semiconductor layer byirradiating a light after said plasma treating step; forming a gateinsulating film on said at least one semiconductor layer after saidcrystallizing step; implanting impurity ions into portions of said atleast one semiconductor layer after forming said gate insulating film;and activating said impurity ions after said implanting step.
 28. Themethod according to claim 27 wherein said metal is at least one selectedfrom the group consisting of Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag andAu.
 29. The method according to claim 27 wherein said semiconductordevice is an active matrix liquid crystal device.
 30. The methodaccording to claim 27 wherein said metal is nickel.
 31. The methodaccording to claim 27 wherein said activating step is conducted byirradiating said at least one semiconductor layer with a laser beam.